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Número de pieza | SPP80N06S2-H5 | |
Descripción | Power-Transistor | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
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OptiMOS® Power-Transistor
Feature
• N-Channel
• Enhancement mode
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
SPP80N06S2-H5
SPB80N06S2-H5
Product Summary
VDS 55 V
RDS(on) 5.5 mΩ
ID 80 A
P- TO263 -3-2
P- TO220 -3-1
Type
SPP80N06S2-H5
SPB80N06S2-H5
Package
Ordering Code
P- TO220 -3-1 Q67060-S6052
P- TO263 -3-2 Q67060-S6053
Marking
2N06H5
2N06H5
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
TC=25°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=80 A , VDD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax2)
Reverse diode dv/dt
IS=80A, VDS=44V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
Value
80
80
320
700
30
6
±20
300
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2003-05-09
1 page www.DataSheet4U.com
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
190
SPP80N06S2-H5
Ptot = 300W
Ai
g
h
f
160
e
140
120
100
80
VGS [V]
a
db
c
d
e
cf
g
h
i
4.5
5.0
5.5
5.8
6.0
6.5
7.0
8.0
10.0
60
b
40
20
a
0
0 1 2 3 4 5 V 6.5
VDS
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 80 µs
160
A
SPP80N06S2-H5
SPB80N06S2-H5
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
SPP80N06S2-H5
18
mΩ d
e
14
f
12
10
g
8
h
6
i
4
2
VGS [V] =
de
f
5.8 6.0 6.5
gh i
7.0 8.0 10.0
0
0 20 40 60 80 100 120 140 A 170
ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
180
S
120
100
80
60
40
20
0
0 1 2 3 4 5V 7
VGS
Page 5
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160 A 200
ID
2003-05-09
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet SPP80N06S2-H5.PDF ] |
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SPP80N06S2-H5 | Power-Transistor | Infineon Technologies |
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