Datasheet 2N6308 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	2N6308	Transistor Transistor Description: High voltage, TO-3, NPN, Silicon, Power Transistor. Designed for high voltage inverters, switching regulators and line – operated amplifier applications. Especially well suited for switching power supply applications in associated consumer products. Features: • Low C	Multicomp	transistor
2	2N6308	Bipolar NPN Device 2N6308 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10	Seme LAB	data
3	2N6308	NPN POWER SILICON TRANSISTOR TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/498 Devices 2N6306 2N6308 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation 2N6306 2N6308 250	Microsemi Corporation	transistor
4	2N6308	NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824	Central Semiconductor Corp	transistor
5	2N6308	Silicon Power Transistors SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage ·High power dissipation APPLICATIONS ·Designed for high voltage inverters, switching regulators,line operated amplifiers, and switching power su	SavantIC	transistor

2N6 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	2N60	N-CHANNEL MOSFET UNISONIC TECHNOLOGIES CO., LTD 2N60 2 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche charact	Unisonic Technologies	mosfet
2	2N60-E	N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 2N60-E 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.	Unisonic Technologies	mosfet
3	2N6008	Series 2N Transistors	Sprague	transistor
4	2N6009	Series 2N Transistors	Sprague	transistor
5	2N6010	Silicon Transistors	Semiconductor	transistor
6	2N6027	SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS 2N6027 2N6028 SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6027 and 2N6028 devices are silicon programmable unijunction transistors, manufactured in an epoxy molded package, designed for adjustable (programmable) characte	Central Semiconductor	transistor
7	2N6027	Programmable Unijunction Transistor 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigge	ON Semiconductor	transistor

Esta página es del resultado de búsqueda del 2N6308. Si pulsa el resultado de búsqueda de 2N6308 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap