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PDF 2SK3777-01R Data sheet ( Hoja de datos )
| Número de pieza | 2SK3777-01R | |
| Descripción | N-CHANNEL SILICON POWER MOSFET | |
| Fabricantes | Fuji Electric | |
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2SK3777-01R
N-CHANNEL SILICON POWER MOSFET
FUJI POWERwww.DataSheet4U.com MOSFET
Super FAP-G Series
Outline Drawings (mm) 200406
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Drain-source voltage
VDS
300
VDSX
300
Continuous Drain Current
ID
53
Pulsed Drain Current
ID(puls]
±212
Gate-Source Voltage VGS ±30
Maximum Avalanche current
IAR
53
Non-Repetitive
EAS 1013.9
Maximum Avalanche Energy
Repetitive
EAR 41
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
dVDS/dt
20
Peak Diode Recovery dV/dt
dV/dt
5
Max. Power Dissipation
PD
210
3.13
Operating and Storage
Tch
+150
Temperature range
Tstg -55 to +150
Unit
V
V
A
A
V
A
mJ
Remarks
VGS=-30V
Note *1
Note *2
mJ Note *3
kV/µs VDS=< 300V
kV/µs Note *4
W Tc=25°C
Ta=25°C
°C
°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Note *1:Tch<= 150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,IAS=22A,L=3.03mH,
VCC=48V,RG=50Ω
EAS limited by maximum channel temperature
and avalanch current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Theemal impedance’
graph
Note *4:IF=< -ID, -di/dt=50A/µs,VCC<= BVDSS,Tch=< 150°C
Item
Drain-Source Breakdown Voltaget
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transcondutance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=300V VGS=0V
VDS=240V VGS=0V
VGS=±30V VDS=0V
ID=26.5A VGS=10V
Tch=25°C
Tch=125°C
ID=26.5A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=180V
ID=26.5A
VGS=10V
RGS=10 Ω
VCC=150V
ID=53A
VGS=10V
IF=53A VGS=0V Tch=25°C
IF=53A VGS=0V
-di/dt=100A/µs Tch=25°C
Min.
300
3.0
12
Typ.
58
24
3600
610
30
40
58
82
10
80
30
25
1.20
420
5.0
Max. Units
V
5.0 V
25 µA
250
100 nA
72 mΩ
S
5475
pF
915
45
60 ns
87
123
15
120 nC
45
38
1.50 V
ns
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.595 °C/W
40.0 °C/W
www.fujielectric.co.jp/fdt/scd
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SK3777-01R.PDF ] | |
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