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PDF FGA15N120AN Data sheet ( Hoja de datos )
| Número de pieza | FGA15N120AN | |
| Descripción | NPT Igbt | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FGA15N120AN
IGBT
General Description
Employing NPT technology, Fairchild’s AN series of IGBTs
provides low conduction and switching losses. The AN
series offers solutions for applications such as induction
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heating (IH), motor control, general purpose
uninterruptible power supplies (UPS).
inverters
and
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.4 V @ IC = 15A
• High input impedance
Applications
Induction Heating, UPS, AC & DC motor controls and general purpose inverters.
C
GC E
TO-3P
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ TC = 25°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
E
FGA15N120AN
1200
± 20
24
15
45
200
80
-55 to +150
-55 to +150
300
Typ.
--
--
Max.
0.63
40
Units
V
V
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
FGA15N120AN Rev. A
1 page  
Common Emitter
V =±
GE
15V,
R
G
=
20Ω
10
T = 25℃
C
T = 125℃
C
1
Eon
Eoff
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0.1
5
10 15 20 25
Collector Current, IC [A]
30
Fig 13. Switching Loss vs. Collector Current
100
Ic MAX (Pulsed)
Ic MAX (Continuous)
10
1
50µs
100µs
1ms
DC Operation
Single Nonrepetitive
0.1 Pulse Tc = 25oC
Curves must be derated
linearly with increase
in temperature
0.01
0.1 1 10
100
Collector - Emitter Voltage, VCE [V]
1000
Fig 15. SOA Characteristics
16
Common Emitter
14
R = 40Ω
L
T = 25℃
C
12
10
8
600V
400V
6 Vcc = 200V
4
2
0
0 20 40 60 80 100 120
Gate Charge, Qg [nC]
Fig 14. Gate Charge Characteristics
100
10
Safe Operating Area
V = 15V, T = 125℃
1 GE C
1 10 100 1000
Collector-Emitter Voltage, VCE [V]
Fig 16. Turn-Off SOA
10
1
0.1
0.01
0.5
0.2
0.1
0.05
0.02
0.01
1E-3
1E-5
single pulse
1E-4
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
1 10
©2003 Fairchild Semiconductor Corporation
Fig 17. Transient Thermal Impedance of IGBT
FGA15N120AN Rev. A
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FGA15N120AN.PDF ] | |
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