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PDF IRF7220 Data sheet ( Hoja de datos )
| Número de pieza | IRF7220 | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF7220 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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PD- 91850C
IRF7220
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
S
S
S
G
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
HEXFET® Power MOSFET
A
1 8D
2
7D
VDSS = -14V
3 6D
4 5 D RDS(on) = 0.012Ω
T op V ie w
SO-8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambient
Max.
-14
±11
±8.8
±88
2.5
1.6
0.02
110
± 12
-55 to + 150
Max.
50
Units
V
A
W
W/°C
mJ
V
°C
Units
°C/W
1
7/16/99
1 page  
12
10
8
6
4
2
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRF7220
300
ID
TOP
-4.9A
250 -8.8A
BOTTOM -11A
200
150
100
50
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
100
D = 0.50
10 0.20
0.10
0.05
0.02
1 0.01
0.1
0.0001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF7220.PDF ] | |
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