74AHCT2G126 Datasheet PDF - NXP Semiconductors
| Part Number | 74AHCT2G126 | |
| Description | Dual buffer/line driver | |
| Manufacturers | NXP Semiconductors | |
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74AHC2G126; 74AHCT2G126
Dual buffer/line driver; 3-state
Rev. 7 — 6 May 2013
Product data sheet
1. General description
The 74AHC2G126 and 74AHCT2G126 are high-speed Si-gate CMOS devices. They
provide a dual non-inverting buffer/line driver with 3-state output. The 3-state output is
controlled by the output enable input (nOE). A LOW at nOE causes the output to assume
a high-impedance OFF-state.
The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V.
The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.
2. Features and benefits
Symmetrical output impedance
High noise immunity
Low power dissipation
Balanced propagation delays
Multiple package options
ESD protection:
HBM JESD22-A114E: exceeds 2000 V
MM JESD22-A115-A: exceeds 200 V
CDM JESD22-C101C: exceeds 1000 V
Specified from 40 C to +125 C
3. Ordering information
Table 1. Ordering information
Type number
Package
Temperature range Name Description
74AHC2G126DP
74AHCT2G126DP
40 C to +125 C TSSOP8 plastic thin shrink small outline package; 8 leads;
body width 3 mm; lead length 0.5 mm
74AHC2G126DC
74AHCT2G126DC
40 C to +125 C VSSOP8 plastic very thin shrink small outline package;
8 leads; body width 2.3 mm
74AHC2G126GD
74AHCT2G126GD
40 C to +125 C XSON8 plastic extremely thin small outline package; no
leads; 8 terminals; body 3 2 0.5 mm
Version
SOT505-2
SOT765-1
SOT996-2
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NXP Semiconductors
74AHC2G126; 74AHCT2G126
Dual buffer/line driver; 3-state
Table 7. Static characteristics …continued
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions
CI input
capacitance
74AHCT2G126
VIH HIGH-level VCC = 4.5 V to 5.5 V
input voltage
VIL LOW-level VCC = 4.5 V to 5.5 V
input voltage
VOH
VOL
IOZ
II
ICC
ICC
CI
HIGH-level VI = VIH or VIL; VCC = 4.5 V
output voltage IO = 50 A
IO = 8.0 mA
LOW-level VI = VIH or VIL; VCC = 4.5 V
output voltage IO = 50 A
IO = 8.0 mA
OFF-state
VI = VCC or GND;
output current VCC = 5.5 V
input leakage VI = 5.5 V or GND;
current
VCC = 0 V to 5.5 V
supply current VI = VCC or GND; IO = 0 A;
VCC = 5.5 V
additional
per input pin; VI = 3.4 V;
supply current other inputs at VCC or GND;
IO = 0 A; VCC = 5.5 V
input
capacitance
25 C
40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max Min
Max
- 1.5 10 - 10 - 10 pF
2.0 -
--
- 2.0
0.8 -
-
0.8
2.0 -
- 0.8
V
V
4.4 4.5 -
3.94 -
-
4.4 -
3.8 -
- 0 0.1 -
- - 0.36 -
- - 0.25 -
- - 0.1 -
- - 1.0 -
- - 1.35 -
0.1
0.44
2.5
1.0
10
1.5
4.4 -
3.70 -
- 0.1
- 0.55
- 10
- 2.0
- 40
- 1.5
V
V
V
V
A
A
A
mA
- 1.5 10 - 10 - 10 pF
11. Dynamic characteristics
Table 8. Dynamic characteristics
GND = 0 V; for test circuit see Figure 8.
Symbol Parameter Conditions
74AHC2G126
tpd propagation nA to nY; see Figure 6
delay
VCC = 3.0 V to 3.6 V
CL = 15 pF
CL = 50 pF
VCC = 4.5 V to 5.5 V
CL = 15 pF
CL = 50 pF
25 C
40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max Min Max
[1]
[2]
- 4.7 8.0 1.0 9.5 1.0 11.5 ns
- 6.6 11.5 1.0
13.0
1.0
14.5 ns
[3]
- 3.4 5.5 1.0
6.5
1.0
7.0 ns
- 4.8 7.5 1.0
8.5
1.0
9.5 ns
74AHC_AHCT2G126
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 6 May 2013
© NXP B.V. 2013. All rights reserved.
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