STP10NM65N Datasheet PDF - STMicroelectronics
Part Number | STP10NM65N | |
Description | N-channel Power MOSFET | |
Manufacturers | STMicroelectronics | |
Logo | ||
There is a preview and STP10NM65N download ( pdf file ) link at the bottom of this page. Total 17 Pages |
Preview 1 page No Preview Available ! STD10NM65N - STF10NM65N
STP10NM65N - STU10NM65N
N-channel 650 V - 0.43 Ω - 9 A - TO-220 - TO-220FP- IPAK - DPAK
second generation MDmesh™ Power MOSFET
Features
www.DataSheet4U.com Type
VDSS
RDS(on)
(@Tjmax) max
ID
STD10NM65N
STF10NM65N
STP10NM65N
STU10NM65N
710 V
710 V
710 V
710 V
< 0.48 Ω
< 0.48 Ω
< 0.48 Ω
< 0.48 Ω
9A
9 A(1)
9A
9A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices implements the second
generation of MDmesh™ Technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
2
1
TO-220
3
2
1
TO-220FP
3
2
1
IPAK
3
1
DPAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STD10NM65N
STF10NM65N
STP10NM65N
STU10NM65N
Marking
10NM65N
10NM65N
10NM65N
10NM65N
Package
DPAK
TO-220FP
TO-220
IPAK
Packaging
Tape & reel
Tube
Tube
Tube
February 2008
Rev 2
1/17
www.st.com
17
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STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
Electrical characteristics
www.DataSheet4U.com
Table 7. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 325 V, ID = 4.5 A
RG = 4.7 Ω VGS = 10 V
(see Figure 18)
Min Typ Max Unit
12 ns
8 ns
50 ns
20 ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 9 A, VGS = 0
ISD = 9 A,
di/dt = 100 A/µs
VDD = 100 V
(see Figure 20)
ISD = 9 A,
di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min Typ Max Unit
9A
36 A
1.3 V
330 ns
3 µC
19 A
430 ns
4 µC
19 A
5/17
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Information | Total 17 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ STP10NM65N.PDF Datasheet ] |
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