STP12NM60N Datasheet PDF - STMicroelectronics
Part Number | STP12NM60N | |
Description | N-channel Power MOSFET | |
Manufacturers | STMicroelectronics | |
Logo | ||
There is a preview and STP12NM60N download ( pdf file ) link at the bottom of this page. Total 18 Pages |
Preview 1 page No Preview Available ! STB12NM60N/-1 - STF12NM60N
STP12NM60N - STW12NM60N
N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247
Second generation MDmesh™ Power MOSFET
Features
www.DataSheet4U.com Type
VDSS
(@Tjmax)
RDS(on)
ID
STB12NM60N
STB12NM60N-1
STF12NM60N
STP12NM60N
STW12NM60N
650V
650V
650V
650V
650V
< 0.41Ω
< 0.41Ω
< 0.41Ω
< 0.41Ω
< 0.41Ω
10A
10A
10A(1)
10A
10A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Description
This series of devices implements second
generation MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Application
■ Switching application
Order codes
Part number
STB12NM60N
STB12NM60N-1
STF12NM60N
STP12NM60N
STW12NM60N
Marking
B12NM60N
B12NM60N
F12NM60N
P12NM60N
W12NM60N
3
1
D²PAK
123
I²PAK
3
2
1
TO-220
TO-247
3
2
1
TO-220FP
Internal schematic diagram
Package
D²PAK
I²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape & reel
Tube
Tube
Tube
Tube
April 2007
Rev 2
1/18
www.st.com
18
|
|
STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N
Electrical characteristics
www.DataSheet4U.com
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 300V, ID = 5A,
RG = 4.7Ω, VGS = 10V
(see Figure 17)
Min Typ Max Unit
15 ns
9 ns
60 ns
10 ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min Typ Max Unit
ISD
ISDM (1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 10A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD =10A, di/dt =100A/µs,
VDD = 100V, Tj = 25°C
(see Figure 19)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VDD = 100V
di/dt =100A/µs, ISD = 10A
Tj = 150°C (see Figure 19)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
10
40
1.3
360
3.5
20
530
5.20
20
A
A
V
ns
µC
A
ns
µC
A
5/18
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for STP12NM60N electronic component. |
Information | Total 18 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ STP12NM60N.PDF Datasheet ] |
Share Link :
Electronic Components Distributor
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
Part Number | Description | MFRS |
STP12NM60N | The function is N-channel Power MOSFET. STMicroelectronics | |
Semiconductors commonly used in industry:
1N4148 |  
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
STP1
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA |