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What is STP12NM60N?

This electronic component, produced by the manufacturer "STMicroelectronics", performs the same function as "N-channel Power MOSFET".


STP12NM60N Datasheet PDF - STMicroelectronics

Part Number STP12NM60N
Description N-channel Power MOSFET
Manufacturers STMicroelectronics 
Logo STMicroelectronics Logo 


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STB12NM60N/-1 - STF12NM60N
STP12NM60N - STW12NM60N
N-channel 600V - 0.35- 10A - D2/I2PAK - TO-220/FP - TO-247
Second generation MDmesh™ Power MOSFET
Features
www.DataSheet4U.com Type
VDSS
(@Tjmax)
RDS(on)
ID
STB12NM60N
STB12NM60N-1
STF12NM60N
STP12NM60N
STW12NM60N
650V
650V
650V
650V
650V
< 0.41
< 0.41
< 0.41
< 0.41
< 0.41
10A
10A
10A(1)
10A
10A
1. Limited only by maximum temperature allowed
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Description
This series of devices implements second
generation MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Application
Switching application
Order codes
Part number
STB12NM60N
STB12NM60N-1
STF12NM60N
STP12NM60N
STW12NM60N
Marking
B12NM60N
B12NM60N
F12NM60N
P12NM60N
W12NM60N
3
1
D²PAK
123
I²PAK
3
2
1
TO-220
TO-247
3
2
1
TO-220FP
Internal schematic diagram
Package
D²PAK
I²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape & reel
Tube
Tube
Tube
Tube
April 2007
Rev 2
1/18
www.st.com
18

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STP12NM60N equivalent
STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N
Electrical characteristics
www.DataSheet4U.com
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 300V, ID = 5A,
RG = 4.7Ω, VGS = 10V
(see Figure 17)
Min Typ Max Unit
15 ns
9 ns
60 ns
10 ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min Typ Max Unit
ISD
ISDM (1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 10A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD =10A, di/dt =100A/µs,
VDD = 100V, Tj = 25°C
(see Figure 19)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VDD = 100V
di/dt =100A/µs, ISD = 10A
Tj = 150°C (see Figure 19)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
10
40
1.3
360
3.5
20
530
5.20
20
A
A
V
ns
µC
A
ns
µC
A
5/18


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Featured Datasheets

Part NumberDescriptionMFRS
STP12NM60NThe function is N-channel Power MOSFET. STMicroelectronicsSTMicroelectronics

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