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PDF SPN02N60C3 Data sheet ( Hoja de datos )
| Número de pieza | SPN02N60C3 | |
| Descripción | Power Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SPN02N60C3 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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Rev. 2.1
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Extreme dv/dt rated
www.DataShee•t4UU.clotrma low effective capacitances
SPN02N60C3
VDS @ Tjmax
RDS(on)
ID
650
3
0.4
V
Ω
A
SOT223
4
3
2
1 VPS05163
Type
SPN02N60C3
Package
SOT223
Ordering Code
Q67040-S4553
Marking
02N60C3
Maximum Ratings
Parameter
Continuous drain current
TA = 25 °C
TA = 70 °C
Pulsed drain current, tp limited by Tjmax
TA = 25 °C
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation, TA = 25°C
Operating and storage temperature
Symbol
ID
ID puls
VGS
VGS
Ptot
Tj , Tstg
Value
0.4
0.3
2.2
±20
±30
1.8
-55... +150
Unit
A
V
W
°C
Page 1
2004-03-01
1 page  
Rev. 2.1
SPN02N60C3
1 Power dissipation
Ptot = f (TA)
1.9 SPN02N60C3
W
www.DataSheet4U.com1.6
1.4
1.2
2 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TA=25°C
10 1
A
10 0
1
0.8
0.6
10 -1
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
0.4
tp = 1ms
DC
0.2
00 20 40 60 80 100 120 °C 160
TA
10
-2
10
0
10 1
10 2 V 10 3
VDS
3 Transient thermal impedance
ZthJC = f (tp)
parameter: D = tp/T
10 1
K/W
10 0
4 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
5.5
A V20
V10
V7
4.5 V6.5
4
3.5
V6
10 -1
D = 0.5
D = 0.2
D = 0.1
10 -2
D = 0.05
D = 0.02
D = 0.01
single pulse
10
-3
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
s 10 1
tp
3
V5.5
2.5
2
1.5 V5
1
V4.5
0.5
V4
00 2 4 6 8 10 12 14 16 V 20
VDS
Page 5
2004-03-01
5 Page 
www.DataSheet4U.com
Rev. 2.1
SPN02N60C3
SOT223
A 6.5±0.2
3 ±0.1
B
4
+0.2
acc. to
DIN 6784
1.6 ±0.1
0.1 max
123
0.7±0.1 2.3
4.6
0.25 M A
0.28 ±0.04
0.25 M B
Page 11
2004-03-01
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet SPN02N60C3.PDF ] | |
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