18NQ11T Datasheet PDF - NXP Semiconductors
Part Number | 18NQ11T | |
Description | PHX18NQ11T | |
Manufacturers | NXP Semiconductors | |
Logo | ||
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N-channel TrenchMOS™ standard level FET
M3D308 Rev. 01 — 13 February 2004
Product data
1. Product profile
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1.1 Description
N-channel enhancement mode field-effect power transistor in a fully isolated plastic
package using TrenchMOS™ technology.
1.2 Features
s Low on-state resistance
s Isolated mounting base
s Fast switching
s Low thermal resistance
1.3 Applications
s DC-to-DC converters
s Switched-mode power supplies
1.4 Quick reference data
s VDS ≤ 110 V
s Ptot ≤ 31.2 W
s ID ≤ 12.5 A
s RDSon ≤ 90 mΩ
2. Pinning information
Table 1: Pinning - SOT186A (TO-220F), simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 source (s)
mb
3 drain (d)
mb mounting base;
isolated
Symbol
d
g
MBB076
s
1 2 3 MBK110
SOT186A (TO-220F)
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Philips Semiconductors
PHX18NQ11T
N-channel TrenchMOS™ standard level FET
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
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ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
110 - - V
99 - - V
VGS(th) gate-source threshold voltage
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
Tj = 150 °C
Tj = −55 °C
23
1.2 -
--
4V
-V
4.4 V
IDSS drain-source leakage current
IGSS gate-source leakage current
VDS = 100 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
VGS = ±10 V; VDS = 0 V
- - 1 µA
- - 500 µA
- 10 100 nA
RDSon drain-source on-state resistance
VGS = 10 V; ID = 9 A; Figure 7 and 8
Tj = 25 °C
Tj = 150 °C
- 67 90 mΩ
- 148 198 mΩ
Dynamic characteristics
Qg(tot) total gate charge
ID = 3 A; VDD = 80 V; VGS = 10 V; Figure 13
- 21 - nC
Qgs gate-source charge
- 2.5 - nC
Qgd gate-drain (Miller) charge
- 8 - nC
Ciss input capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 11 - 635 - pF
Coss output capacitance
- 105 - pF
Crss
td(on)
tr
reverse transfer capacitance
turn-on delay time
rise time
VDD = 50 V; RL = 15 Ω; VGS = 10 V; RG = 5.6 Ω
-
-
-
60 -
6-
12 -
pF
ns
ns
td(off)
turn-off delay time
- 20 - ns
tf fall time
- 10 - ns
Source-drain diode
VSD source-drain (diode forward) voltage IS = 12 A; VGS = 0 V; Figure 12
trr reverse recovery time
IS = 12 A; dIS/dt = −100 A/µs; VGS = 0 V
- 0.87 1.2 V
- 55 - ns
Qr recovered charge
- 135 - nC
9397 750 12915
Product data
Rev. 01 — 13 February 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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