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PDF MMS8550 Data sheet ( Hoja de datos )
| Número de pieza | MMS8550 | |
| Descripción | SOT-23 Plastic-encapsulate Bipolar Transistors | |
| Fabricantes | Micro Commercial Components | |
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MCC
omponents
20736 Marilla Street Chatsworth
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Features
• SOT-23 Plastic-Encapsulate Transistors
• Capable of 0.3Watts(Tamb=25OC) of Power Dissipation.
• Collector-current 0.5A
• Collector-base Voltage 40V
• Operating and storage junction temperature range: -55OC to +150OC
• Marking Code: 2TY
w.DataSheet4UEl.ceocmtrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
OFF CHARACTERISTICS
Min Max Units
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=0.1mAdc, IB=0)
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0)
ICBO Collector Cutoff Current
(VCB=40Vdc, IE=0)
ICEO Collector Cutoff Current
(VCE=20Vdc, IB=0)
IEBO Emitter Cutoff Current
(VEB=3.0Vdc, IC=0)
ON CHARACTERISTICS
40 --- Vdc
25 --- Vdc
5.0 --- Vdc
--- 0.1 uAdc
--- 0.1 uAdc
--- 0.1 uAdc
hFE(1)
DC Current Gain
(IC=50mAdc, VCE=1.0Vdc)
hFE(2)
DCCurrent Gain
(IC=500mAdc, VCE=1.0Vdc)
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc)
VBE(sat)
Base-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc)
VEB Base- Emitter Voltage
(IE=100mAdc)
SMALL-SIGNAL CHARACTERISTICS
120 350 ---
50 --- ---
--- 0.6 Vdc
--- 1.2 Vdc
--- 1.4 Vdc
fT Transistor Frequency
150 --- MHz
(IC=20mAdc, VCE=6.0Vdc, f=30MHz)
CLASSIFICATION OF HFE (1)
Rank
Range
L
120-200
H
200-350
MMS8550
PNP Silicon
Plastic-Encapsulate
Transistor
SOT-23
A
D
CB
FE
G HJ
DIMENSIONS
INCHES
DIM MIN
MAX
A .110 .120
B .083 .098
C .047 .055
D .035 .041
E .070 .081
F .018 .024
G
.0005
.0039
H .035 .044
J .003 .007
K .015 .020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
Suggested Solder
Pad Layout
.031
.800
NOTE
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: 2
www.mccsemi.com
2003/04/30
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