|
|
Datasheet UPF1030 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | UPF1030 | Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS UPF1030
30W, 1.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET
This device is designed for base station applications up to frequencies of 1.0 GHz. Rater with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class |  CREE | data |
UPF Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | UPF01002 | 10 Gigabit/s Ethernet Transceiver with OC-192c Framer and XAUI Interface PRODUCT BRIEF
10 Gigabit/s Ethernet Transceiver with OC-192c Framer and XAUI Interface
The TenGiPHY-W is a single chip transceiver IC for 10 Gbit/s Ethernet and Fibre Channel connectivity. It offers a serial, full duplex 10 Gbit/s interface to an optical sub-module. The integrated CDR and CMU ope  Infineon Technologies transceiver | | |
| 2 | UPF01012 | 10 Gigabit/s Transceiver with XAUI Interface Infineon Technologies transceiver | | |
| 3 | UPF1010 | Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS UPF1010 10W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS
This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power Amplifiers in Class A or AB CREE data | | |
| 4 | UPF1030 | Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS UPF1030
30W, 1.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET
This device is designed for base station applications up to frequencies of 1.0 GHz. Rater with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class CREE data | | |
| 5 | UPF1060 | Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS UPF1060
60W, 1.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET
This device is designed for base station applications up to frequencies of 1.0 GHz. Rater with a minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A CREE data | | |
| 6 | UPF1080 | Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS UPF1080
80W, 1.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET
This device is designed for base station applications up to frequencies of 1.0 GHz. Rater with a minimum output power of 80W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class CREE data | | |
| 7 | UPF18060 | Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS ™ UPF18060
60W, 1.88GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS
Designed for DCS base station applications in the frequency band 1805 to 1880 GHz. Rated with a minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in Class A or AB  UltraRF data | |
| Esta página es del resultado de búsqueda del UPF1030. Si pulsa el resultado de búsqueda de UPF1030 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |