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PDF G4PC30F Data sheet ( Hoja de datos )
| Número de pieza | G4PC30F | |
| Descripción | IRG4PC30F | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de G4PC30F (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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PD 91459B
INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC30F
Fast Speed IGBT
Features
• Fast: Optimized for medium operating
www.DataSheet4U.com frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-247AC package
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.59V
@VGE = 15V, IC = 17A
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-247AC
Max.
600
31
17
120
120
± 20
10
100
42
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Typ.
–––
0.24
–––
6 (0.21)
Max.
1.2
–––
40
–––
Units
°C/W
g (oz)
1
1229//00
1 page  
IRG4PC30F
2000
1600
www.DataSheet4U.com
1200
VGE = 0V
f = 1 MHz
Cies = Cge + Cgc + Cce
Cres = Cce
Coes = Cce + Cgc
SHORTED
Cies
800
Coes
400
Cres
0A
1 10 100
VCE, Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
VCE = 400V
IC = 17A
16
12
8
4
0
0 10 20 30 40 50
Qg, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
A
60
1.50
VCC = 480V
VGE = 15V
TJ = 25°C
IC = 17A
1.45
1.40
1.35
10
RG = 23 Ω
VGE = 15V
VCC = 480V
1
I C = 34A
I C = 17A
IC = 8.5A
1.30
0
10 20 30 40 50
R G, Gate Resistance ( Ω )
A
60
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
0.1 A
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet G4PC30F.PDF ] | |
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