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PDF 70N03 Data sheet ( Hoja de datos )
| Número de pieza | 70N03 | |
| Descripción | N-channel Enhancement-mode MOSFET | |
| Fabricantes | General Semiconductor | |
| Logotipo |  |
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GFB70N03
N-Channel Enhancement-Mode MOSFET
TGREENNCFHET®
VDS 30V RDS(ON) 8mΩ ID 70A
D
TO-263AB
G
0.380 (9.65)
0.420 (10.67)
0.21 (5.33)
Min.
D
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
S
0.42
(10.66)
www.DataS0h.3e20e(t84.1U3).com
0.360 (9.14)
PIN
GDS
Seating Plate
-T-
0.096 (2.43)
0.102 (2.59)
0.027 (0.686)
0.037 (0.940)
0.575 (14.60)
0.625 (15.88)
0.120 (3.05)
0.155 (3.94)
0.055 (1.39)
0.066 (1.68)
Dimensions in inches
and (millimeters)
0.014 (0.35)
0.020 (0.51)
0.100 (2.54)
0.130 (3.30)
0.63
(17.02)
0.33
(8.38)
Mounting Pad
Layout
0.08
(2.032)
0.24
(6.096)
0.12
(3.05)
Mechanical Data
Case: JEDEC TO-263 molded plastic body
Terminals: Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mounting Position: Any Weight: 1.3g
Features
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for Low Voltage DC/DC Converters
• Fast Switching for High Efficiency
Maximum Ratings and Thermal Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
Continuous Drain Current(1)
VGS
± 20
ID 70
Pulsed Drain Current
IDM 200
Maximum Power Dissipation
TC = 25°C
TC = 100°C
PD
62.5
25
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 150
Lead Temperature (1/8” from case for 5 sec.)
TL 275
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance(2)
RθJC
RθJA
2.0
40
Notes: (1) Maximum DC current limited by the package
(2) 1-in2 2oz. Cu PCB mounted
Unit
V
A
W
°C
°C
°C/W
°C/W
5/16/01
1 page  
GFB70N03
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 10 – Breakdown Voltage
vs. Junction Temperature
40
ID = 250µA
39
38
37
www.DataSheet346 U.com
35
--50 --25
0
25 50
75 100 125 150
TJ -- Junction Temperature (°C)
Fig. 11 – Thermal Impedance
1
D = 0.5
0.2
PDM
0.1
0.1
0.05
Single Pulse
0.01
t1
t2
1. Duty Cycle, D = t1/t2
2. RθJC (t) = RθJC(norm) *RθJC
3. RθJC = 2.0°C/W
4. TJ - TC = PDM * RθJC (t)
0.0001 0.001
0.01
0.1
1
10
Pulse Duration (sec.)
Fig. 12 – Power vs. Pulse Duration
1000
Single Pulse
800
RθJC = 2.0°C/W
TC = 25°C
600
400
200
0
0.0001
0.001
0.01
0.1
Pulse Duration (sec.)
1
10
Fig. 13 – Maximum Safe Operating Area
1000
100 RDS(ON) Limit
100µs
1ms
10ms
10
VGS = 10V
Single Pulse
RΘJC = 2.0 ¡C/W
TC = 25°C
1
0.1 1
100ms
DC
10
VDS -- Drain-Source Voltage (V)
100
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 70N03.PDF ] | |
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