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PDF SPU30N03S2-08 Data sheet ( Hoja de datos )
| Número de pieza | SPU30N03S2-08 | |
| Descripción | OptiMOS Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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OptiMOS® Power-Transistor
Feature
• N-Channel
• Enhancement mode
• Low On-Resistance RDS(on)
www.DataShee•t4UE.cxocmellent Gate Charge x RDS(on) product (FOM)
• Superior thermal resistance
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
SPU30N03S2-08
Product Summary
VDS 30 V
RDS(on) 8.2 mΩ
ID 30 A
P- TO251 -3-1
Type
Package
Ordering Code Marking
SPU30N03S2-08 P- TO251 -3-1 Q67042-S4140 2N0308
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
TC=25°C1)
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=30 A , VDD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax2)
Reverse diode dv/dt
IS=30A, VDS=24V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
Value
30
30
120
250
12
6
±20
125
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2003-04-30
1 page  
SPU30N03S2-08
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
SPU30N03S2-08
75 Ptot = 125W
A
www.DataSheet4U.com
60
55
50
45
40
35
30
i
hg
VGS [V]
a 4.2
b 4.5
c 4.8
d 5.0
f e 5.2
f 5.5
g 5.8
h
ei
6.0
10.0
25
20 d
15
10 c
5b
a
0
0 0.5 1 1.5 2 2.5 3 3.5 4 V
5
VDS
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
SPU30N03S2-08
36
mΩ d
ef
28
24
20
16
12
8
4
VGS [V] =
de
f
5.0 5.2 5.5
ghi
5.8 6.0 10.0
0
0 10 20 30
g
h
i
40 A 55
ID
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 80 µs
100
A
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
80
S
80
60
70
60 50
50 40
40
30
30
20
20
10
10
0
0 1 2 3 4 5 V 6.5
VGS
0
0 20 40 60 80 A 120
ID
Page 5
2003-04-30
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SPU30N03S2-08.PDF ] | |
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