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PDF UTCHE8050 Data sheet ( Hoja de datos )
| Número de pieza | UTCHE8050 | |
| Descripción | NPN EPITAXIAL SILICON TRANSISTOR | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UTC HE8050 NPN EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL NPN TRANSISTOR
www.DataSheet4U.com
DESCRIPTION
The UTC HE8050 is a low voltage high current small
signal NPN transistor, designed for Class B push-pull 2W
audio amplifier for portable radio and general purpose
applications.
FEATURES
*Collector current up to 1.5A
*Collector-Emitter voltage up to 25 V
*complimentary to UTC HE8550
1
TO-92
1:EMITTER 2:COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
Collector-Base Voltage
VCBO
40
Collector-Emitter Voltage
VCEO
25
Emitter-Base Voltage
VEBO
6
Collector Dissipation(Ta=25°C)
Pc
1
Collector Current
Ic 1.5
Junction Temperature
Tj 150
Storage Temperature
TSTG
-65 ~ +150
UNIT
V
V
V
W
A
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-Base Breakdown Voltage
BVCBO
Ic=100µA,IE=0
40
Collector-Emitter Breakdown Voltage BVCEO
Ic=2mA,IB=0
25
Emitter-Base Breakdown Voltage
BVEBO
IE=100µA,Ic=0
6
Collector Cut-Off Current
ICBO
VCB=35V,IE=0
Emitter Cut-Off Current
IEBO
VEB=6V,Ic=0
DC Current Gain
hFE1
hFE2
hFE3
VCE=1V,Ic=5mA
VCE=1V,Ic=100mA
VCE=1V,Ic=800mA
45
85
40
Collector-Emitter Saturation Voltage VCE(sat)
Ic=800mA,IB=80mA
Base-Emitter Saturation Voltage
VBE(sat)
Ic=800mA,IB=80mA
Base-Emitter Saturation Voltage
VBE
VCE=1V,Ic=10mA
Current Gain Bandwidth Product
fT
VCE=10V,Ic=50mA
100
Output Capacitance
Cob VCB=10V,IE=0
f=1MHz
TYP
135
160
110
9.0
MAX
100
100
500
0.5
1.2
1.0
UNIT
V
V
V
nA
nA
V
V
V
MHz
pF
UTC
UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R201-009,A
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet UTCHE8050.PDF ] | |
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