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PDF 12N60 Data sheet ( Hoja de datos )
| Número de pieza | 12N60 | |
| Descripción | 600/650 Volts N-CHANNEL MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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1. 12N60  Hay una vista previa y un enlace de descarga de 12N60 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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UNISONIC TECHNOLOGIES CO., LTD
12N60
12 Amps, 600/650 Volts
N-CHANNEL MOSFET
Power MOSFET
DESCRIPTION
www.DataSheet4Ufi.ecoldmTehffeecUt TtraCns1i2stNo6rs0
are N-Channel enhancement
(MOSFET) which are produced
mode
using
power
UTC’s
proprietary, planar stripe, DMOS technology.
These devices are suited for high efficiency switch mode
power supply. To minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the
avalanche and commutation mode the advanced technology has
been especially tailored.
FEATURES
* RDS(ON) = 0.7Ω @VGS = 10 V
* Ultra low gate charge ( typical 42 nC )
* Low reverse transfer capacitance ( CRSS = typical 25 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
*Pb-free plating product number:12N60L
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
12N60-x-TA3-T
12N60L-x-TA3-T
12N60-x-TF3-T
12N60L-x-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F
Pin Assignment
123
GDS
GDS
Packing
Tube
Tube
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-170.A
1 page  
12N60
TYPICAL CHARACTERISTICS
On-Resign Characteristics
Top: VGS
15V
101 10V
8.0V
7.0V
6.5V
6.0V
Bottom: 5.5V
www.DataSheet4U.com100
Notes:
250 s Pulse Test
TC=25
10-1 100 101
Drain-Source Voltage, VGS (V)
Power MOSFET
Transfer Characteristics
101
150
25
100
55
10-1
2
Notes:
1.VDS=50V
2.250 s Pulse Test
4 68
Gate-Source Voltage, VGS (V)
10
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-170.A
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 12N60.PDF ] | |
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