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Datasheet MT45W2MW16B Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | MT45W2MW16B | (MT45W2MW16B / MT45W4MW16B) Burst Cellularram Memory
ADVANCE‡
4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY
BURST CellularRAMTM
Features
• Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–2.25V VCCQ (Option W) • Random Access Time: 70ns • Burst |
Micron Semiconductor |
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1 | MT45W2MW16BFB | (MT45W2MW16BFB / MT45W4MW16BFB) Burst Cellularram Memory
ADVANCE‡
4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY
BURST CellularRAMTM
Features
• Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–2.25V VCCQ (Option W) • Random Access Time: 70ns • Burst |
Micron Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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