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Datasheet D1069 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | D1069 | SILICON NPN DOUBLE DIFFUSED TYPE TRANSISTOR This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
|  Toshiba | transistor |
| 2 | D1069 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1069
DESCRIPTION ·High Collector Current Capability ·High Collector Power Dissipation Capability ·Built-in Damper Diode
APPLICATIONS ·TV horizontal deflection output applications. ·High voltage switching app |  INCHANGE | transistor |
| 3 | D1069 | NPN Transistor, 2SD1069 |  Toshiba Semiconductor | data |
D10 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | D10 | Memory Micromodules General Information for D1/ D2 and C Packaging D10, D15, D20, D22, C20, C30 MICROMODULES
Memory Micromodules General Information for D1, D2 and C Packaging
s
Micromodules were developed specifically for embedding in Smartcards and Memory Cards The Micromodule provides: – Support for the chip – Electrical contacts – Suitable embedding inte  STMicroelectronics data | | |
| 2 | D1000 | NPN Transistor, 2SD1000 Renesas data | | |
| 3 | D1001 | NPN Transistor, 2SD1001 Renesas data | | |
| 4 | D1001UK | GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 175MHz SINGLE ENDED TetraFET
D1001UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A B C
1
2 D
4 M
3
E F
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
G
H
K
I
J
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIA  Seme LAB data | | |
| 5 | D1002UK | METAL GATE RF SILICON FET MECHANICAL DATA
A
B C
1
4 M
2 3
F
D E
G
HK
PIN 1 PIN 3
SOURCE SOURCE
DA
PIN 2 PIN 4
IJ
DRAIN GATE
DIM mm A 24.76 B 18.42 C 45° D 6.35 E 3.17 F 5.71 G 9.52 H 6.60 I 0.13 J 4.32 K 2.54 M 20.32
Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.13 REF 0.02 0.13 0.13 0.25
Inches 0.975 0.725 45° 0.25 0.1 Seme LAB gate | | |
| 6 | D1003UK | METAL GATE RF SILICON FET TetraFET
D1003UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A B C
1
2
D E
4 M
3
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W – 28V – 175MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
F
G
H
K
I
J
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIA Seme LAB gate | | |
| 7 | D1004 | METAL GATE RF SILICON FET TetraFET
D1004UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C D (2 pls) E
B
1
2
3
A
G
5
4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
H I
F
M
K
J
N
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss Seme LAB gate | |
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