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PDF GS78108AB Data sheet ( Hoja de datos )
| Número de pieza | GS78108AB | |
| Descripción | 1M x 8 8Mb Asynchronous SRAM | |
| Fabricantes | GSI Technology | |
| Logotipo |  |
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GS78108AB
BGA
Commercial Temp
Industrial Temp
1M x 8
8Mb Asynchronous SRAM
8, 10, 12 ns
3.3 V VDD
Features
• Fast access time: 8, 10, 12 ns
• CMOS low power operation: 240/190/170 mA at minimum
cycle time
• Single 3.3 V ± 0.3 V power supply
• All inputs and outputs are TTL-compatible
• Fully static operation
• Industrial Temperature Option: –40° to 85°C
• 14 mm x 22 mm, 119-bump, 1.27 mm Pitch Ball Grid Array
package
• RoHS-compliant package available
Symbol
A0 to A19
DQ1 to DQ8
CE
WE
OE
VDD
Description
The GS78108A is a high speed CMOS Static RAM organized
as 1,048,576-words by 8-bits. Static design eliminates the need
for external clocks or timing strobes. The GS78108operates on
a single 3.3 V power supply, and all inputs and outputs are
TTL-compatible. The GS7810A8 is available in a
14 mm x 22 mm BGA package.
Block Diagram
VSS
NC
Pin Descriptions
Description
Address input
Data input/output
Chip enable input
Write enable input
Output enable input
+3.3 V power supply
Ground
No connect
A0 Row
Decoder
Address
Input
Buffer
A19
CE
WE
OE
Control
Memory Array
Column
Decoder
I/O Buffer
DQ1 DQ8
Rev: 1.04 5/2006
1/11
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
1 page  
www.DataSheet4U.com
AC Test Conditions
Parameter
Conditions
Input high level
Input low level
Input rise time
Input fall time
Input reference level
Output reference level
Output load
VIH = 2.4 V
VIL = 0.4 V
tr = 1 V/ns
tf = 1 V/ns
1.4 V
1.4 V
Fig. 1& 2
Notes:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted
3. Output load 2 for tLZ, tHZ, tOLZ and tOHZ.
GS78108AB
Output Load 1
DQ
50Ω 30pF1
VT = 1.4 V
Output Load 2
3.3 V
DQ 589Ω
5pF1 434Ω
AC Characteristics
Read Cycle
Parameter
Read cycle time
Address access time
Chip enable access time (CE)
Output enable to output valid (OE)
Output hold from address change
Chip enable to output in low Z (CE)
Output enable to output in low Z (OE)
Chip disable to output in High Z (CE)
Output disable to output in High Z (OE)
Symbol
tRC
tAA
tAC
tOE
tOH
tLZ*
tOLZ*
tHZ*
tOHZ*
-8
Min Max
8—
—8
—8
— 3.5
3—
3—
0—
—4
— 3.5
-10
Min Max
10 —
— 10
— 10
—4
3—
3—
0—
—5
—4
-12
Min Max
12 —
— 12
— 12
—5
3—
3—
0—
—6
—5
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Rev: 1.04 5/2006
5/11
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
5 Page 
www.DataSheet4U.com
Revision History
Rev. Code: Old;
New
GS78108AB_r1
GS78108AB_r1_01
GS78108AB_r1_01;
GS78108AB_r1_02
GS78108AB_r1_02;
GS78108AB_r1_03
GS78108AB_r1_03;
GS78108AB_r1_04
GS78108AB
Types of Changes
Format or Content
Page #/Revisions/Reason
• Creation of new datasheet
Content
• Added AC specifications to datasheet
Content/Format
• Updated format
• Added variation information to package mechanical
Content
• Added Variation 2 119 BGA to datasheet
• Added date codes to mechanicals
Content
• Added RoHS-compliant package information
Rev: 1.04 5/2006
11/11
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet GS78108AB.PDF ] | |
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