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PDF GA600HD25S Data sheet ( Hoja de datos )
| Número de pieza | GA600HD25S | |
| Descripción | Standard Speed IGBT | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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SINGLE SWITCH IGBT DUAL INT-A-Pak
Features
• Standard speed, optimized for battery powered
application
• Very low conduction losses
• HEXFREDTM antiparallel diodes with ultra-soft
recovery
• Industry standard package
• UL recognition pending
• Internal thermistor
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding
• Lower EMI, requires less snubbing
PD - 94341A
GA600HD25S
StandardTM Speed IGBT
VCES = 250V
VCE(on) typ. = 1.20V
@VGE = 15V, IC = 600A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
ICM
ILM
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 85°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current
Peak Switching Current
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Thermal / Mechanical Characteristics
RθJC
RθJC
RθCS
www.irf.com
Parameter
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink
Mounting Torque, Case-to-Terminal 1, 2
Mounting Torque, Case-to-Terminal 3,4,5
Weight of Module
Max.
250
600
1200
1200
1200
±17
2500
1920
1000
-40 to +150
-40 to +125
Typ.
—
—
0.04
—
—
—
400
Units
V
A
V
W
°C
Max.
0.065
0.20
—
6.0
5.0
2.0
—
Units
°C/W
N.m
g
1
09/02/02
1 page  
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160000
120000
80000
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
40000
Coes
Cres
0
1 10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
GA600HD25S
20 VCC = 2450000VV
I C = 600A
16
12
8
4
0
0
1000
2000
3000
4000
QG, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
150
VCC = 150V
VGE = 15V
TJ = 25 °C
IC = 600A
140
130
120
1000
RG = 15Ω; RG2 = 0Ω
VGE = 15V
VCC = 150V
100
IC = 1000A
IC = 600A
IC = 300A
110
0
10 20 30 40
RG , Gate Resistance ( Ω )
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
10 A
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet GA600HD25S.PDF ] | |
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