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PDF DBT151F-600 Data sheet ( Hoja de datos )
| Número de pieza | DBT151F-600 | |
| Descripción | Standard Gate SCR | |
| Fabricantes | DnI | |
| Logotipo |  |
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DBT151F-600
Standard Gate
Silicon Controlled -
Rectifiers
Symbol
2. Anode
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 12 A )
Low On-State Voltage (1.5V(Typ.)@ ITM)
Isolation Voltage ( VISO = 2500V AC )
1.Cathode
3.Gate
General Description
Standard gate triggering thyristor is fully isolated package suitable
for the application where requiring high bidirectional blocking volt-
age capability and also suitable for over voltage protection ,motor
control circuit in power tool, inrush current limit circuit and heating
control system.
BVDRM = 600V
IT(RMS) = 12 A
ITSM = 120 A
TO-220F
1
2
3
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(AV)
IT(RMS)
ITSM
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
sine wave,50 to 60Hz,gate open
half sine wave : TC = 78 °C
180° Conduction Angle
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
I2t I2t for Fusing
t = 8.3ms
di/dt Critical rate of rise of on-state current
PGM
Forward Peak Gate Power Dissipation
TC = 78 °C, pulse width 1.0
PG(AV)
Forward Average Gate Power Dissipation TC = 78 °C,pulse width 1.0
IFGM
Forward Peak Gate Current
TC = 78 °C, pulse width 1.0
VRGM
VISO
TJ
TSTG
Reverse Peak Gate Voltage
Isolation Breakdown Voltage(R.M.S.)
Operating Junction Temperature
Storage Temperature
TC =78 °C, pulse width 1.0
A.C. 1 minute
June , 2005. Rev.0
copyright @ D&I Semiconductor Co., Ltd., All rights reserved.
Ratings
600
7.6
12
120
72
50
5
0.5
2
5
2500
- 40 ~ 125
- 40 ~ 150
Units
V
A
A
A
A2s
A/
W
W
A
V
V
°C
°C
1/5
1 page  
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DBT151F-600
TO-220F Package Dimension
Dim.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
1
2
Min.
10.4
6.18
9.55
13.47
6.05
1.26
3.17
1.87
2.57
2.51
1.25
0.45
0.6
mm
Typ.
2.54
5.08
3.7
3.2
1.5
Max.
10.6
6.44
9.81
13.73
6.15
1.36
3.43
2.13
2.83
2.62
1.55
0.63
1.0
Min.
0.409
0.243
0.376
0.530
0.238
0.050
0.125
0.074
0.101
0.099
0.049
0.018
0.024
Inch
Typ.
0.100
0.200
0.146
0.126
0.059
Max.
0.417
0.254
0.386
0.540
0.242
0.054
0.135
0.084
0.111
0.103
0.061
0.025
0.039
F
B
A
E
HI
C
G
D
L
1
2
3
J
K
N
1
2
M
O
1. Cathode
2. Anode
3. Gate
5/5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet DBT151F-600.PDF ] | |
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