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PDF 7MBP75RJ120 Data sheet ( Hoja de datos )

Número de pieza 7MBP75RJ120
Descripción IGBT IPM R-series 1200V class 1200V / 75A 7 in one-package
Fabricantes FE 
Logotipo FE Logotipo



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7MBP75RJ120
IGBT IPM R-series 1200V class
1200V / 75A 7 in one-package
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs.
· Low power loss and soft switching.
· High performance and high reliability IGBT with overheating protection.
· Both P-side and N-side alarm output available.
· Higher reliability because of a big decrease in number of parts in
built-in control circuit.
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Item
Symbol
Bus voltage
DC
Surge
Short operating
Collector-Emitter voltage *1
Collector current
DC
1ms
Duty=76.1% *2
Collector power dissipation One transistor *3
Collector current
DC
1ms
Forward Current of Diode
Collector power dissipation One transistor *3
Supply voltage of Pre-Driver *4
Input signal voltage *5
Input signal current
Alarm signal voltage *6
Alarm signal current *7
Junction temperature
Operating case temperature
Storage temperature
Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.)
Screw torque
Terminal (M5)
Mounting (M5)
VDC
VDC(surge)
VSC
VCES
IC
ICP
-IC
PC
IC
ICP
IF
PC
VCC
Vin
Iin
VALM
IALM
Tj
Topr
Tstg
Viso
Rating
Min.
Max.
0
0
200
0
-
-
-
-
-
-
-
-0.5
-0.5
-
-0.5
-
-
-20
-40
-
-
-
900
1000
800
1200
75
150
75
500
25
50
25
198
20
Vcc+0.5
3
Vcc
20
150
100
125
AC2500
3.5
3.5
Unit
V
V
V
V
A
A
A
W
A
A
A
W
V
V
mA
V
mA
°C
°C
°C
V
N·m
N·m
Note
*1 : Vces shall be applied to the input voltage between terminal P and U or V or W or DB, N and U or V or W or DB.
*2 : 125°C/FRD Rth(j-c)/(Ic x VF Max.)=125/0.73(75x3.0)x100=76.1%
*3 : Pc=125°C/IGBT Rth(j-c)=125/0.25=500W [Inverter]
Pc=125°C/IGBT Rth(j-c)=125/0.63=198W [Inverter]
*4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13
*5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 15,16,17,18 and 13.
*6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13.
*7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19.

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7MBP75RJ120 pdf
7MBP75RJ120
Characteristics
Control circuit characteristics (Respresentative)
Power supply curr ent vs. Switching fr eque ncy
Tj= 1 0 0 ° C
50
P- side
N - sid e
40
V cc =17V
V cc =15V
V cc =13V
30
20
10
0
0
V cc =17V
V cc =15V
V cc =13V
5 10 15 20
Sw itc hing f reque nc y : fs w (kHz)
25
U nder voltage vs. J unction tempe ra tur e
14
12
10
8
6
4
2
0
20 40 60 80 1 00 120 1 40
Junc tio n tem pe rat ure : Tj (°C)
Alarm hold time vs. P ower supply voltage
3
2 .5
Tj=125° C
2
T j= 2 5 ° C
1 .5
1
0 .5
0
12 13 14 15 16 17 18
Po we r s up ply vo lta ge : Vc c ( V)
IGBT-IPM
Input signal threshold voltage
vs. P ower supply voltage
2.5
T j= 25 °C
T j= 1 2 5 ° C
2
} Vin(off)
1.5 } Vin(on)
1
0.5
0
12 13 14 15 16 17 18
Po we r s up ply volta ge : Vc c ( V)
U nde r voltage hysterisis vs. Jnction tempe ra tur e
1
0 .8
0 .6
0 .4
0 .2
0
20
2 00
1 50
1 00
40 60 80 1 00 120
Junction temperature : Tj (°C)
1 40
Over heating c haracteris tic s
TcOH ,TjOH ,TcH ,TjH vs. Vcc
TjO H
T cO H
50
0
12
T cH,TjH
13 14 15 16 17
Po w er supply volt age : Vc c (V)
18

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