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What is GSB772S?

This electronic component, produced by the manufacturer "GTM", performs the same function as "PNP EPITAXIAL PLANAR TRANSISTOR".


GSB772S Datasheet PDF - GTM

Part Number GSB772S
Description PNP EPITAXIAL PLANAR TRANSISTOR
Manufacturers GTM 
Logo GTM Logo 


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CORPORATION ISSUED DATE :2004/09/13
REVISED DATE :2004/11/29B
GSB772S
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GSB772S is designed for using in output stage of 0.75W amplifier, voltage regulator, DC-DC converter and driver.
Package Dimensions
D
E
S1 TO-92
S E A T IN G
PLANE
b1
e1
e
b
C
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage at Ta=25
Collector to Emitter Voltage at Ta=25
Emitter to Base Voltage at Ta=25
Collector Current at Ta=25
Total Power Dissipation at Ta=25
Characteristics at Ta = 25
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
-40
-30
-5
-
-
-
-
30
100
-
-
Typ.
-
-
-
-
-
-0.3
-1
-
160
80
55
Max.
-
-
-
-1
-1
-0.5
-2
-
500
-
-
Classification Of hFE2
Rank
Range
Q
100-200
P
160-320
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70
-
1.150 1.390
2.42 2.66
Ratings
+150
-55 ~ +150
-40
-30
-5.0
-3.0
750
Unit
V
V
V
A
mW
Unit
V
V
V
uA
uA
V
V
MHz
Pf
Test Conditions
IC=-100uA
IC=-10mA
IE=-10uA
VCB=-30V
VEB=-3V
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
VCE=-2V, IC=-20mA
VCE=-2V, IC=-1A
VCE=-20V, IC=-20mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle
2%
E
250-500
1/2


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for GSB772S electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
GSB772SThe function is PNP EPITAXIAL PLANAR TRANSISTOR. GTMGTM
GSB772SSThe function is PNP EPITAXIAL PLANAR TRANSISTOR. GTMGTM

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