STU1855PLS Datasheet PDF - SamHop Microelectronics
Part Number | STU1855PLS | |
Description | P-Channel E nhancement Mode Field Effect Transistor | |
Manufacturers | SamHop Microelectronics | |
Logo | ||
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S T U/D1855P LS
S amHop Microelectronics C orp.
Aug,18 2005
P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S ID R DS (ON) ( m W ) Max
-55V
-15A
73 @ VGS = -10V
90 @ VGS = -4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
TO-252 and TO-251 P ackage.
D
G
S
S TU S E R IE S
T O -252AA(D-P AK )
GDS
S TD S E R IE S
TO-251(l-P AK)
D
G
S
AB S OLUTE MAXIMUM R ATINGS
P arameter
Drain-S ource Voltage R ating
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous a @ Ta
-P ulsed b
25 C
70 C
(TA=25 C unles s otherwis e noted)
S ymbol
V s pike d
VDS
VGS
ID
Limit
60
-55
20
-15
-12
Unit
V
V
V
A
A
IDM -30
A
Drain-S ource Diode Forward C urrent a IS -10
A
Maximum P ower Dissipation a
Operating Junction and S torage
Temperature R ange
Ta= 25 C
Ta=70 C
PD
TJ, TSTG
42
28
-55 to 150
W
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
R JC
3 C/W
Thermal R esistance, Junction-to-Ambient
1R JA
50
C /W
1
|
|
S TU/D1855PLS
V DD
V IN R L
D V OUT
VGS
R GEN
G
S
Figure 11. Switching Test Circuit
td(on)
V OUT
ton
tr
td(off)
90%
10% INVERTED
toff
tf
90%
10%
VIN
10%
90%
50% 50%
PULSE WIDTH
Figure 12. Switching Waveforms
6
2
1
Duty C ycle=0.5
0.2
0.1 0.1
0.05
0.02
0.01
10-4
S ingle P uls e
10-3
10-2
10-1
S quare Wave P uls e Duration (s ec)
1
P DM
t1
t2
1. R qJA (t)=r (t) * R qJA
2. R qJA=S ee Datas heet
3. T J M-T A = P DM* R qJ A (t)
4. Duty C ycle, D=t1/t2
10
100
F igure 13. Normalized T hermal T rans ient Impedance C urve
5
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Information | Total 8 Pages | |
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Featured Datasheets
Part Number | Description | MFRS |
STU1855PL | The function is P-Channel E nhancement Mode Field Effect Transistor. SamHop Microelectronics | |
STU1855PLS | The function is P-Channel E nhancement Mode Field Effect Transistor. SamHop Microelectronics | |
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