(PDF) GBC817 Datasheet - NPN SILICON TRANSISTOR

Número de pieza	GBC817
Descripción	NPN SILICON TRANSISTOR
Fabricantes	GTM
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No Preview Available ! www.DataSheet4U.com GBC817 NPN EPITAXIAL PLANAR TRANSISTOR Description The GBC817 is designed for switching and AF amplifier application, suitable for driver storages and low power output storages. Package Dimensions 1/2 Absolute Maximum Ratings at Ta = 25 Parameter Symbol Junction Temperature Tj Storage Temperature Tstg Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current IC Total Power Dissipation PD Characteristics at Symbol BVEBO Min. 5 BVCEO BVCES ICES 45 50 - IEBO *VCE(sat) VBE(on) - - - hFE 100 fT - Cob - Ta = 25 Typ. - - - - - - - - 100 - Max. - - - 100 100 700 1.2 630 - 12 REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 - 0.85 1.15 0 10 Ratings +150 -55 ~ +150 50 45 5 800 225 Unit V V V mA mW Unit V V V nA nA mV V MHz pF Test Conditions IE=-100uA IC=10mA IC=100uA VCE=25V VEB=4V IC=500mA, IB=50mA VCE=1V, IC=300mA VCE=1V, IC=100mA VCE=5V, IC=10mA, f=100MHz VCB=10V, f=1MHz, IE=0A 1 page

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PDF GBC817 Data sheet ( Hoja de datos )