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PDF GBC557 Data sheet ( Hoja de datos )
| Número de pieza | GBC557 | |
| Descripción | PNP EPITAXIAL TRANSISTOR | |
| Fabricantes | GTM | |
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GBC557
PNP SILICON TRANSISTOR
Description
The GBC557 is designed for drive and output-stages of audio amplifiers.
Features
High DC Current Gain: 120~800 @VCE=-5V, IC=-2mA
Complementary to GBC547
Package Dimensions
D
TO-92
E
S1
ISSUED DATE :2005/10/21
REVISED DATE :
S E A T IN G
PLANE
b1
e1
e
b
C
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70
-
1.150 1.390
2.42 2.66
Absolute Maximum Ratings (TA=25 )
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (continuous)
IC
Total Device Dissipation @ TA =25
Derate above 25
PD
Total Device Dissipation @ TC =25
Derate above 25
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance, Junction to Ambient
R JA
Thermal Resistance, Junction to Case
R JC
Ratings
-50
-45
-5
-100
625
5.0
1.5
12
-55 ~ +150
200
83.3
Unit
V
V
V
mA
mW
mW/
W
mW/
/W
/W
Electrical Characteristics (TA = 25 unless otherwise noted)
Symbol
Min. Typ. Max. Unit
Test Conditions
BVCBO
-50 - - V IC=-100uA, IE=0
BVCEO
BVEBO
-45 - - V IC=-2mA, IB=0
-5 - - V IE=-100uA, IC=0
ICES
*VCE(sat)1
-
-
-100
nA VCE=-20V, VBE=0
-
-0.075
-0.3
V IC=-10mA, IB=-0.5mA
*VCE(sat)2
-
-0.25
-0.65
V IC=-100mA, IB=-5mA
*VBE(sat)1
- -0.7 -
V IC=-10mA, IB=-0.5mA
*VBE(sat)2
*VBE(on)1
-
-0.55
-1.0
-0.62
-
-0.7
V IC=-100mA, IB=-5mA
V VCE=-5V, IC=-2mA
*VBE(on)2
*hFE
- -0.7 -0.82
120 - 800
V VCE=-5V, IC=-10mA
VCE=-5V, IC=-2mA
fT - 320 - MHz VCE=-5V, IC=-10mA, f=100MHz
Cob - 3.0 6.0 pF VCB=-10V, IC=0, f=1MHz
Classification Of hFE
Rank
A
Range
120 ~ 220
B
180 ~ 460
C
420 ~ 800
*Pulse Test: Pulse Width 380 s, Duty Cycle
2%
GBC557
Page: 1/2
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