G8051 Datasheet PDF - GTM
Part Number | G8051 | |
Description | NPN EPITAXIAL TRANSISTOR | |
Manufacturers | GTM | |
Logo | ||
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CORPORATION ISSUED DATE :2004/12/27
REVISED DATE :
G8051
NPN EPITAXIAL TRANSISTOR
Description
The G8051 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.
Features
*High Collector current (IC: 1.5A)
*Complementary to G8551
Package Dimensions
D
E
S1
TO-92
S E A T IN G
PLANE
b1
e1
e
b
C
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70 -
1.150 1.390
2.42 2.66
Absolute Maximum Ratings (Ta = 25 ,unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
VCBO
40
Collector to Emitter Voltage
VCEO
25
Emitter to Base Voltage
VEBO
6
Collect Current
IC 1.5
Base Current
IB 0.5
Junction Temperature
Tj +150
Storage Temperature Range
TsTG
-55 ~ +150
Total Power Dissipation
PD 1
Unit
V
V
V
A
A
W
Electrical Characteristics(Ta = 25
Symbol
Min.
Typ.
BVCBO
40 -
BVCEO
25 -
BVEBO
6-
ICBO
--
IEBO
--
*VCE(sat)
--
*VBE(sat)
--
*VBE(on)
--
*hFE1
45 -
*hFE2
120 -
*hFE3
40 -
fT 100 -
Cob - 9
,unless otherwise specified)
Max.
Unit
Test Conditions
- V IC=100uA
- V IC=2mA
- V IE=100uA
100 nA VCB=35V
100 nA VBE=6V
0.5 V lC=800mA, IB=80mA
1.2 V lC=800mA, IB=80mA
1 V VCE=1V, IC=10mA
- VCE=1V, IC=5mA
500 VCE=1V, IC=100mA
- VCE=1V, IC=800mA
-
MHz
VCE=10V, IC=50mA, f=100MHz
- pF VCB=10V, IE=0, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Classification Of hFE1
Rank
C
Range
120 ~ 200
D
160 ~ 320
E
250 ~ 500
G8051
Page: 1/2
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for G8051 electronic component. |
Information | Total 2 Pages | |
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Download | [ G8051.PDF Datasheet ] |
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