(PDF) G3314 Datasheet - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Número de pieza	G3314
Descripción	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes	GTM
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No Preview Available ! www.DataSheet4U.com Pb Free Plating Product CORPORATION ISSUED DATE :2005/03/04 REVISED DATE : G3314 BVDSS -30V P-CHANNEL ENHANCEMENT MODE POWER MOSFET RDS(ON) ID 240m -1.9A Description The G3314 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. Features Low On-resistance Ultrahigh-speed switching *4V drive Package Dimensions Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Symbol Rthj-a REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 - 0.85 1.15 0 10 Ratings -30 20 -1.9 -1.5 -10 1.38 0.01 -55 ~ +150 Unit V V A A A W W/ Ratings 90 Unit /W 1/4 1 page

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PDF G3314 Data sheet ( Hoja de datos )