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PDF G2N7000 Data sheet ( Hoja de datos )
| Número de pieza | G2N7000 | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | GTM | |
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G2N7000
ISSUED DATE :2004/02/18
REVISED DATE :2006/10/30F
N-CHANNEL ENHANCEMENT MODE MOSFET
Description
The G2N7000 is designed for high voltage, high speed applications such as switching regulators, converters,
solenoid and relay drivers.
Package Dimensions
D
TO-92
E
S1
S E A T IN G
PLANE
b1
e1
e
b
C
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70
-
1.150 1.390
2.42 2.66
Absolute Maximum Ratings at Ta = 25
Parameter
Operating Junction and Storage Temperature Range
Drain-Source Voltage
Gate-Source Voltage
-Continuous
-Non-repetitive (tp 50us)
Drain Current
-Continuous
- Pulsed
Power Dissipation
Ta=25
Derate above 25
Thermal Resistance ,Junction-to-Ambient
Maximum Lead Temperature for Soldering Purposes,1/16” from
case for 10 seconds
Symbol
Tj, Tstg
VDSS
VGS
VGSM
ID
IDM
PD
R JA
TL
Ratings
-55 ~ +150
60
±20
±40
200
500
0.35
2.8
357
300
Unit
V
V
V
mA
W
mW /
/W
Electrical Characteristics (Tc= 25 unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Symbol
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
Min.
60
0.8
-
-
75
Typ.
-
-
-
-
-
Max.
-
3.0
±100
1
-
Static Drain-Source on-State Resistance RDS(ON)
-
-
- 5.0
- 6.0
Drain-Source on-Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS(ON)
-
-
- 2.5
- 0.45
GFS
100
-
-
Ciss
-
- 60
Coss
-
- 25
Crss
-
-
5
Unit
Test Conditions
V VGS=0, ID=250uA
V VDS= VGS, ID=1.0mA
nA VGS=±20V, VDS=0
uA VDS=60V, VGS=0
mA VGS =4.5V ,VDS=10V
VGS=10V, ID=500mA
VGS=4.5V, ID=75mA
V
VGS=10V, ID=500mA
VGS=4.5V, ID=75mA
mS VDS=10 V, ID=200mA
pF VDS=25V, VGS=0V, f=1MHz
G2N7000
Page: 1/2
1 page | ||
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| PDF Descargar | [ Datasheet G2N7000.PDF ] | |
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