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What is GTT8209E?

This electronic component, produced by the manufacturer "GTM", performs the same function as "N-CHANNEL ENHANCEMENT MODE POWER MOSFET".


GTT8209E Datasheet PDF - GTM

Part Number GTT8209E
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Manufacturers GTM 
Logo GTM Logo 


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Pb Free Plating Product
ISSUED DATE :2006/08/08
REVISED DATE :
GTT8209E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
20V
21m
7A
Description
The GTT8209E used advanced trench technology to provide excellent on-resistance extremely efficient and
cost-effectiveness device.
The GTT8209E is universally used for all commercial-industrial applications.
Features
* Lower Gate Charge
*Small Package Outline
*RoHS Compliant
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
A1
A2
c
D
E
E1
Millimeter
Min. Max.
1.10 MAX.
0 0.10
0.70 1.00
0.12 REF.
2.70 3.10
2.60 3.00
1.40 1.80
REF.
L
L1
b
e
e1
Millimeter
Min. Max.
0.45 REF.
0.60 REF.
0° 10°
0.30 0.50
0.95 REF.
1.90 REF.
Ratings
20
±12
7
5.7
30
1.2
0.01
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Value
110
Unit
/W
GTT8209E
Page: 1/4


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for GTT8209E electronic component.


Information Total 4 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
GTT8209EThe function is N-CHANNEL ENHANCEMENT MODE POWER MOSFET. GTMGTM

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