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PDF GMBCX53 Data sheet ( Hoja de datos )
| Número de pieza | GMBCX53 | |
| Descripción | PNP SILICON EPITAXIAL TRANSISTOR | |
| Fabricantes | GTM | |
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ISSUED DATE :2005/04/04
REVISED DATE :2005/11/21C
GMBCX53
PNP SILICON EPITAXIAL TRANSISTOR
Description
The GMBCX53 is designed for use in driver stages of audio amplifiers and medium power general purpose
amplification.
Features
Collector-Emitter Voltage: VCEO=-80V
Complementary to GMBCP56
Package Dimensions
SOT-89
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature Range
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current(DC)
Total Power Dissipation
Symbol
Tj
TsTG
VCBO
VCEO
VEBO
IC
PD
Electrical Characteristics (Ta = 25 )
Symbol
Min.
Typ.
Max.
BVCBO
-100
-
-
BVCEO
-80 -
-
BVEBO
-5 -
-
ICBO
- - -100
IEBO
- - -100
*VCE(sat)1
- - -500
*VBE(on)
- - -1000
*hFE1
63 -
-
*hFE2
63 - 250
*hFE3
40 -
-
fT
100 -
-
Classification Of hFE2
Rank
A
Range
63 - 160
B
100 - 250
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.4 4.6
4.05 4.25
1.50 1.70
1.30 1.50
2.40 2.60
0.89 1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5°TYP.
0.70 REF.
Ratings
+150
-65 ~ +150
-100
-80
-5
1
1.2
Unit
V
V
V
A
W
Unit
V
V
V
nA
nA
mV
mV
MHz
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-30V, IE=0
VEB=-5V, IC=0
IC=-500mA, IB=-50mA
IC=-500mA, VCE=-2V,
VCE=-2V, IC=-5mA
VCE=-2V, IC=-150mA
VCE=-2V, IC=-500mA
VCE=-5V, IC=-10mA, f=100MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle
2%
GMBCX53
1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet GMBCX53.PDF ] | |
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