GSS4501S Datasheet PDF - GTM
Part Number | GSS4501S | |
Description | Power MOSFET ( Transistor ) | |
Manufacturers | GTM | |
Logo | ||
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Pb Free Plating Product
ISSUED DATE :2006/04/27
REVISED DATE :
GSS4501S
N-CH BVDSS 30V
N-CH RDS(ON) 33m
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
N-CH ID
P-CH BVDSS
6A
-30V
N-CH RDS(ON) 50m
Description
N-CH ID
-5.3A
The GSS4501S provide the designer with the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Low On-resistance
*Schottky Diode Included
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.80
6.20
4.80
5.00
3.80
4.00
0° 8°
0.40
0.90
0.19
0.25
REF.
M
H
L
J
K
G
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
N-channel P-channel
30 -30
±20 ±20
6 -5.3
4.8 -4.7
20 -20
2.0
0.016
-55 ~ +150
Thermal Data
Parameter
Thermal Resistance Junction-ambient3
Max.
Symbol
Rthj-a
Value
62.5
Millimeter
Min. Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Unit
V
V
A
A
A
W
W/
Unit
/W
GSS4501S
Page: 1/7
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N-Channel
ISSUED DATE :2006/04/27
REVISED DATE :
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Circuit
GSS4501S
Fig 12. Gate Charge Circuit
Page: 5/7
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for GSS4501S electronic component. |
Information | Total 7 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ GSS4501S.PDF Datasheet ] |
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