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PDF GSMBT2222A Data sheet ( Hoja de datos )
| Número de pieza | GSMBT2222A | |
| Descripción | TRANSISTOR | |
| Fabricantes | GTM | |
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CORPORATION ISSUED DATE :2005/01/12
REVISED DATE :
GSMBT2222A
NPN EPITAXIAL PLANAR T RANSISTOR
Description
The GSMBT2222A is designed for general purpose amplifier and high speed, medium-power switching applications.
Features
High frequency current gain
High speed switching
For complementary use with PNP type GSMBT2907A
Package Dimensions
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage at Ta=25
Collector to Emitter Voltage at Ta=25
Emitter to Base Voltage at Ta=25
Collector Current at Ta=25
Total Power Dissipation at Ta=25
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Characteristics at Ta = 25
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEX
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Min.
75
40
6
-
-
-
-
-
-
-
35
50
75
100
40
300
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
10
500
1.0
1.2
2.0
-
-
-
300
-
-
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0 0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15 0.35
0.25 0.40
0.10 0.25
0.65 REF.
0.15 BSC.
Ratings
+150
-55 ~ +150
75
40
6
600
225
Unit
V
V
V
mA
mW
Unit
V
V
V
nA
nA
nA
mV
V
V
V
MHz
Test Conditions
IC=100uA , IE=0
IC=10mA,IB=0
IE=10uA ,IC=0
VCB=60V, IE=0
VCE=60V ,VEB(OFF)=3V
VEB=3V
IC=380mA, IB=10mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=100uA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCB=20V, IC=20mA, f=100MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle 2%
1/2
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