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PDF GSMBD4148 Data sheet ( Hoja de datos )
| Número de pieza | GSMBD4148 | |
| Descripción | SWITCHING DIODE | |
| Fabricantes | GTM | |
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GSMBD4148
ISSUED DATE :2004/12/13
REVISED DATE :
SU RFAC E M OU NT, S WIT C H IN G DIO D E
VOLTAGE 75V, CURRENT 0. 2A
Description
The GSMBD4148 is designed for high-speed switching application in hybrid thick and thin-film circuits. The devices is manufactured by the
silicon epitaxial planar process and packed in plastic surface mount package.
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0 0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15 0.35
0.25 0.40
0.10 0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Maximum Peak Reverse Voltage
Maximum Reverse Voltage
Average Forward Current
Surge Current(1us)
Typical Junction Capacitance between Terminal (Note 1)
Maximum Reverse Recovery Time (Note2)
Total Power Dissipation
Symbol
Tj
Tstg
VRM
VR
IO
IFSM
CJ
TRR
PD
Ratings
+150
-65 ~ +150
100
75
200
2
4.0
4.0
225
Unit
V
V
mA
A
pF
nSec
mW
Electrical Characteristics at Ta = 25
Characteristic
Symbol
Min.
Max.
Unit
Test Conditions
Forward Voltage
VF -
1 V IF=10mA
Reverse Breakdown
VR 100
-
V IR=100uA
Reverse Current
IR -
5 uA VR=75V
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 0 volt.
2. Measured at applied forward current of 10mA, reverse current of 1.0mA, Reverse voltage of 6.0volt and RL=100
3. ESD sensitive product handling required.
.
1/2
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