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PDF GSC4762 Data sheet ( Hoja de datos )
| Número de pieza | GSC4762 | |
| Descripción | NPN EPITAXIAL SILICON TRANSISTOR | |
| Fabricantes | GTM | |
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ISSUED DATE :2005/07/15
REVISED DATE :
GSC4762
NPN EPITAXIAL SILICON TRANSISTOR
Description
The GSC4672 is designed for low frequency amplifier applications.
Features
Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=1A/50mA
Excellent DC current gain characteristics
Package Dimensions
D
E
S1
TO-92
S E A T IN G
PLANE
b1
e1
e
b
C
Absolute Maximum Ratings (TA=25 )
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (DC)
IC
Collector Current (Pulse PW=10ms)
IC
Total Device Dissipation
PD
Junction Temperature
TJ
Storage Temperature
Tstg
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70
-
1.150 1.390
2.42 2.66
Ratings
60
50
6
2
5
750
150
-55 ~ +150
Unit
V
V
V
A
A
mW
Electrical Characteristics (TA = 25 unless otherwise noted)
Symbol
Min. Typ. Max. Unit
Test Conditions
BVCBO
60 - - V IC=50uA, IE=0
BVCEO
50 - - V IC=1mA, IB=0
BVEBO
6 - - V IE=50uA, IC=0
ICBO
IEBO
- - 100 nA VCB=60V, IE=0
- - 100 nA VEB=5V, IC=0
*VCE(sat)
-
0.1 0.35
V IC=1A, IB=50mA
*hFE
120 - 400
VCE=2V, IC=500mA
fT - 210 - MHz VCE=2V, IE=500mA, f=100MHz
Cob - 25 - pF VCB=10V, IE=0, f=1MHz
*Pulse Test: Pulse Width 380 s, Duty Cycle
Classification Of hFE
Rank
Range
A
120 ~ 240
B
200 ~ 400
2%
1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet GSC4762.PDF ] | |
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