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Número de pieza | GSC4418 | |
Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Fabricantes | GTM | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de GSC4418 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Pb Free Plating Product
ISSUED DATE :2006/10/27
REVISED DATE :
GSC4418
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
30V
14m
11.5A
Description
The GSC4418 uses advanced trench technology to provide excellent on-resistance and low gate charge.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for use as a load switch or in PWM applications.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.80
6.20
4.80
5.00
3.80
4.00
0° 8°
0.40
0.90
0.19
0.25
REF.
M
H
L
J
K
G
Millimeter
Min. Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS@20V
Continuous Drain Current3, VGS@20V
Pulsed Drain Current1
VDS
VGS
ID @TA=25
ID @TA=70
IDM
Total Power Dissipation
Linear Derating Factor
PD @TA=25
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
30
±25
11.5
9.7
40
2.5
0.02
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient
Max.
Symbol
Rthj-amb
Value
50
Unit
/W
GSC4418
Page: 1/4
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet GSC4418.PDF ] |
Número de pieza | Descripción | Fabricantes |
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