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PDF GL194A Data sheet ( Hoja de datos )
| Número de pieza | GL194A | |
| Descripción | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |
| Fabricantes | GTM | |
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CORPORATION ISSUED DATE :2006/06/07
REVISED DATE :
GL194A
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
Description
The GL194A is designed for medium power amplifier applications.
Features
1 Amp continuous current
Complementary to GL195A
Package Dimensions
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0° 10°
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13°TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (DC)
IC
Collector Current (Pulse)
IC
Total Power Dissipation
PD
Ratings
+150
-65~+150
40
40
5
1
2
2
Unit
V
V
V
A
A
W
Electrical Characteristics (Ta = 25
Symbol
Min.
Typ.
BVCBO
40 -
*BVCEO
40 -
BVEBO
5-
ICBO
--
ICES
--
IEBO
--
*VCE(sat)1
--
*VCE(sat)2
--
*VBE(sat)
--
*VBE(on)
--
*hFE1
300 -
*hFE2
300 -
*hFE3
200 -
*hFE4
35 -
fT 150 -
Cob - -
Classification Of hFE2
Rank
P
Range
300 ~ 700
Q
500 ~ 900
, unless otherwise stated)
Max.
Unit
Test Conditions
- V IC=100uA , IE=0
- V IC=10mA, IB=0
- V IE=100uA ,IC=0
100 nA VCB=30V, IE=0
100 nA VCES=30V
100 nA VEB=4V, IC=0
0.3 V IC=500mA, IB=50mA
0.5 V IC=1A, IB=100mA
1.1 V IC=1A, IB=100mA
1.0 V VCE=5V, IC=1A
- VCE=5V, IC=1mA
900 VCE=5V, IC=500mA
- VCE=5V, IC=1A
- VCE=5V, IC=2A
- MHz VCE=10V, IC=50mA, f=100MHz
10 pF VCB=10V, IE=0, f=1MHz
*Measured under pulse condition. Pulse width=300 s, Duty Cycle
2%
GL194A
Page: 1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet GL194A.PDF ] | |
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