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Datasheet GJ5706 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | GJ5706 | NPN HIGH SPEED SWITCHING TRANSISTOR
ISSUED DATE :2005/05/06 REVISED DATE :
GJ5706
Description Features
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
The GJ5706 is designed high current switching applications. *Large current capacitance *Low collector-to-emitter saturation voltage *High-speed switching *High allowable |  GTM | transistor |
GJ5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GJ50L02 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/12/16 REVISED DATE :
GJ50L02
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
25V 15m 45A
The GJ50L02 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effe GTM mosfet | | |
| 2 | GJ5103 | NPN HIGH SPEED SWITCHING TRANSISTOR
ISSUED DATE :2005/10/03 REVISED DATE :
GJ5103
Description Features
NPN HIGH SPEED SWITCHING TRANSISTOR
The GJ5103 is designed for high speed switching applications. Low saturation voltage, typically VCE(sat) =0.15V at IC/IB=3A/0.15A High speed switching, typically tf =0.1 s at GTM transistor | | |
| 3 | GJ55N03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/08/16 REVISED DATE :
GJ55N03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
25V 6m 55A
The GJ55N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effec GTM mosfet | | |
| 4 | GJ5706 | NPN HIGH SPEED SWITCHING TRANSISTOR
ISSUED DATE :2005/05/06 REVISED DATE :
GJ5706
Description Features
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
The GJ5706 is designed high current switching applications. *Large current capacitance *Low collector-to-emitter saturation voltage *High-speed switching *High allowable GTM transistor | | |
| 5 | GJ5M | Diode, Rectifier American Microsemiconductor diode | |
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