GJ965 Datasheet PDF - GTM
Part Number | GJ965 | |
Description | NPN EPITAXIAL PLANAR TRANSISTOR | |
Manufacturers | GTM | |
Logo | ||
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GJ965
ISSUED DATE :2005/05/12
REVISED DATE :
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GJ965 is designed for use as AF output amplifier and flash unit.
Package Dimensions
TO-252
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Absolute Maximum Ratings (Ta = 25 , unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
VCBO
40
Collector to Emitter Voltage
VCEO
20
Emitter to Base Voltage
VEBO
7
Collector Current (Continuous)
IC
5
Collector Current (Peak PT=10mS)
ICP
8
Junction Temperature
Tj +150
Storage Temperature
TsTG
-55 ~ +150
Total Power Dissipation
PD 2
Unit
V
V
V
A
A
W
Electrical Characteristics (Rating at Ta=25 )
Symbol
Min.
Typ.
Max.
BVCBO
40 -
-
BVCEO
20 -
-
BVEBO
7- -
ICBO
- - 100
IEBO
- - 100
*VCE(sat)
- 350 1000
*hFE1
230 - 800
*hFE2
150 -
-
fT - 150 -
Cob - - 50
Classification Of hFE1
Rank
Q
Range
230 ~ 380
R
340 ~ 600
Unit
V
V
V
nA
nA
mV
MHz
pF
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=60V
VEB=7V
lC=3A, IB=100mA
VCE=2V, IC=500mA
VCE=2V, IC=2A
VCE=6V, IE=50mA
VCB=20V, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle
2%
S
560 ~ 800
GJ965
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for GJ965 electronic component. |
Information | Total 2 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ GJ965.PDF Datasheet ] |
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