GJ1060 Datasheet PDF - GTM
| Part Number | GJ1060 | |
| Description | NPN EPITAXIAL PLANAR TRANSISTOR | |
| Manufacturers | GTM | |
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ISSUED DATE :2005/09/05
REVISED DATE :
GJ1060
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GJ1060 is designed for relay drivers, high-speed inverters, converters and other general large-current
switching.
Features
Low Collector-Emitter Saturation Voltage : VCE (sat) =0.4V (Max.) @ IC=3A, IB=0.3A,
Package Dimensions
TO-252
Absolute Maximum Ratings (TA=25 )
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Collector Current (Pulse)
ICP
Total Device Dissipation (TC=25 )
PD
Junction Temperature
TJ
Storage Temperature
Tstg
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
60
50
6
5
9
20
150
-55 ~ +150
Unit
V
V
V
A
A
W
Electrical Characteristics (TA = 25
Symbol
Min.
Typ.
BVCBO
60 -
BVCEO
50 -
BVEBO
6-
ICBO
--
IEBO
--
*VCE(sat)
--
*hFE1
70 -
*hFE2
30 -
fT - 30
Cob - 100
ton (Turn-on Time)
-
0.1
tstg (Storage Time)
-
1.4
tf (Fall Time)
- 0.2
unless otherwise noted)
Max.
Unit
Test Conditions
- V IC=1mA, IE=0
- V IC=1mA, IB=0
- V IE=1mA, IC=0
100 uA VCB=40V, IE=0
100 uA VEB=4V, IC=0
0.4 V IC=3A, IB=0.3A
280 VCE=2V, IC=1A
- VCE=2V, IC=3A
- MHz VCE=5V, IC=1A
- pF VCB=10V, IE=0, f=1MHz
-
- uS See specified test circuit
-
*Pulse Test: Pulse Width 380 s, Duty Cycle
2%
GJ1060
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for GJ1060 electronic component. |
| Information | Total 3 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ GJ1060.PDF Datasheet ] | |
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