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Datasheet GJ09N20 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | GJ09N20 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/06/27 REVISED DATE :
GJ09N20
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
200V 380m 8.6A
The GJ09N20 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-e |  GTM | mosfet |
GJ0 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GJ01L60 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/08/19 REVISED DATE :
GJ01L60
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
600V 12 1A
Description
The GJ01L60 (TO-252) is universally preferred for all commercial-industrial surface mount applications and suited for AC/DC GTM mosfet | | |
| 2 | GJ01N60 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2004/06/01 REVISED DATE :2005/01/28B
GJ01N60
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
600V 8 1.6A
The GJ01N60 provide the designer with the best combination of fast switching. The TO-252 package is universally preferred fo GTM mosfet | | |
| 3 | GJ03N70 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/01/05 REVISED DATE :
GJ03N70
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
600V 4.0 3.3A
Description
The GJ03N70 is specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter application GTM mosfet | | |
| 4 | GJ08P10 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/02/21 REVISED DATE :
GJ08P10
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-100V 200m -8A
Description
The GJ08P10 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan GTM mosfet | | |
| 5 | GJ09N20 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/06/27 REVISED DATE :
GJ09N20
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
200V 380m 8.6A
The GJ09N20 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-e GTM mosfet | |
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