DataSheet39.com

What is GJ03N70?

This electronic component, produced by the manufacturer "GTM", performs the same function as "N-CHANNEL ENHANCEMENT MODE POWER MOSFET".


GJ03N70 Datasheet PDF - GTM

Part Number GJ03N70
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Manufacturers GTM 
Logo GTM Logo 


There is a preview and GJ03N70 download ( pdf file ) link at the bottom of this page.





Total 5 Pages



Preview 1 page

No Preview Available ! GJ03N70 datasheet, circuit

www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/01/05
REVISED DATE :
GJ03N70
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
600V
4.0
3.3A
Description
The GJ03N70 is specially designed as main switching devices for universal 90~265VAC off-line AC/DC
converter applications.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and
suited for AC/DC converters.
Features
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching Speed
Package Dimensions
TO-252
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current, VGS@10V
ID @TC=25
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
ID @TC=100
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
Single Pulse Avalanche Energy2
EAS
Avalanche Current
IAR
Repetitive Avalanche Energy
EAR
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
600
±30
3.3
2.1
13.2
45
0.36
85
3.3
3.3
-55 ~ +150
Unit
V
V
A
A
A
W
W/
mJ
A
mJ
Value
2.8
110
Unit
/W
/W
GJ03N70
Page: 1/5

line_dark_gray
GJ03N70 equivalent
ISSUED DATE :2005/01/05
REVISED DATE :
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GJ03N70
Page: 5/5


line_dark_gray

Preview 5 Page


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for GJ03N70 electronic component.


Information Total 5 Pages
Link URL [ Copy URL to Clipboard ]
Download [ GJ03N70.PDF Datasheet ]

Share Link :

Electronic Components Distributor


An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists.


SparkFun Electronics Allied Electronics DigiKey Electronics Arrow Electronics
Mouser Electronics Adafruit Newark Chip One Stop


Featured Datasheets

Part NumberDescriptionMFRS
GJ03N70The function is N-CHANNEL ENHANCEMENT MODE POWER MOSFET. GTMGTM

Semiconductors commonly used in industry:

1N4148   |   BAW56   |   1N5400   |   NE555   |  

LM324   |   BC327   |   IRF840  |   2N3904   |  



Quick jump to:

GJ03     1N4     2N2     2SA     2SC     74H     BC     HCF     IRF     KA    

LA     LM     MC     NE     ST     STK     TDA     TL     UA    



Privacy Policy   |    Contact Us     |    New    |    Search