GI8050 Datasheet PDF - GTM
Part Number | GI8050 | |
Description | NPN EPITAXIAL TRANSISTOR | |
Manufacturers | GTM | |
Logo | ||
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ISSUED DATE :2005/05/06
REVISED DATE :
GI8050
NPN EPITAXIAL TRANSISTOR
Description
The GI8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.
Features
*High Collector current (IC: 1.5A)
*Complementary to GI8550
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
7.20 7.80
2.30 REF.
0.60 0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Absolute Maximum Ratings (Ta = 25 ,unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
VCBO
40
Collector to Emitter Voltage
VCEO
25
Emitter to Base Voltage
VEBO
6
Collector Current
IC 1.5
Base Current
IB 0.5
Junction Temperature
Tj +150
Storage Temperature
TsTG
-55 ~ +150
Total Power Dissipation
PD 1.25
Unit
V
V
V
A
A
W
Electrical Characteristics (Rating at 25 ambient temperature unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
40 - - V IC=100uA
BVCEO
25 - - V IC=2mA
BVEBO
6 - - V IE=100uA
ICBO
- - 100 nA VCB=35V
IEBO
- - 100 nA VBE=6V
*VCE(sat)
- - 0.5 V lC=800mA, IB=80mA
*VBE(sat)
- - 1.2 V lC=800mA, IB=80mA
*VBE(on)
- - 1.0 V VCE=1V, IC=10mA
*hFE1
45 -
-
VCE=1V, IC=5mA
*hFE2
120 - 500
VCE=1V, IC=100mA
*hFE3
40 -
-
VCE=1V, IC=800mA
fT
100 -
- MHz VCE=10V, IC=50mA, f=100MHz
Cob - 9 - pF VCB=10V, IE=0, f=1MHz
Classification Of hFE2
Rank
C
D
* Pulse Test: Pulse Width 380 s, Duty Cycle
E
Range
120 ~ 200
160 ~ 300
250 ~ 500
2%
GI8050
Page: 1/2
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for GI8050 electronic component. |
Information | Total 2 Pages | |
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Download | [ GI8050.PDF Datasheet ] |
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