GI5706 Datasheet PDF - GTM
| Part Number | GI5706 | |
| Description | PNP EPITAXIAL PLANAR SILICON TRANSISTOR | |
| Manufacturers | GTM | |
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ISSUED DATE :2005/05/06
REVISED DATE :
GI5706
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
Description
The GI5706 is designed high current switching applications.
Features
*Large current capacitance
*Low collector-to-emitter saturation voltage
*High-speed switching
*High allowable power dissipation
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
7.20 7.80
2.30 REF.
0.60 0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Absolute Maximum Ratings (Ta = 25 ,unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
VCBO
80
Collector to Emitter Voltage
VCES
80
Collector to Emitter Voltage
VCEO
50
Emitter to Base Voltage
VEBO
6
Collector Current
IC 5
Collector Current(Pulse)
ICP 7.5
Base Current
IB 1.2
Junction Temperature
Tj +150
Storage Temperature
TsTG
-55 ~ +150
Total Power Dissipation
PD
PD(TC=25 )
0.8
15
Unit
V
V
V
V
A
A
A
W
W
Electrical Characteristics (Rating at Ta=25 )
Symbol
Min.
Typ.
Max.
BVCBO
80 -
-
BVCES
BVCEO
BVEBO
80 -
50 -
6-
-
-
-
ICBO
- -1
IEBO
*VCE(sat)1
- -1
- - 135
*VCE(sat)2
- - 240
*VBE(sat)
*hFE
- - 1.2
200 - 560
fT - 400 -
Cob - 15 -
ton (Turn-On Time)
-
35
-
tstg (Storage Time)
tf (Fall Time)
-
-
300
20
-
-
Unit
V
V
V
V
uA
uA
mV
mV
V
MHz
pF
ns
ns
ns
Test Conditions
IC=10uA, IE=0
IC=100uA, RBE=0
IC=1mA, RBE=
IE=10uA, IC=0
VCB=40V, IE=0
VEB=4V, IC=0
lC=1A, IB=50mA
lC=2A, IB=100mA
lC=2A, IB=100mA
VCE=2V, IC=500mA
VCE=10V, IC=500mA
VCB=10V, f=1MHz
See specified test circuit.
See specified test circuit.
See specified test circuit.
GI5706
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for GI5706 electronic component. |
| Information | Total 3 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ GI5706.PDF Datasheet ] | |
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