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PDF MMST2222A-G Data sheet ( Hoja de datos )
| Número de pieza | MMST2222A-G | |
| Descripción | GENERAL PURPOSE TRANSISTORS | |
| Fabricantes | Comchip Technology | |
| Logotipo |  |
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General Purpose Transistor
MMST2222A-G (NPN)
RoHS Device
SMD Diodes Specialist
Features
-Power dissipation
PCM : 0.2W (TA=25OC)
-Collector current
ICM : 0.6A
-Collector-base voltage
V(BR)CBO : 75V
-Operating and storage junction temperature range
TJ, TSTG : -55OC to +150OC
Marking: K3P
SOT-323
0.054 (1.35)
0.045 (1.15)
0.044 (1.10)
0.035 (0.90)
0.087 (2.20)
0.070 (1.8)
3
12
0.056 (1.40)
0.047 (1.20)
0.006 (0.15)
0.002 (0.05)
0.087 (2.20)
0.078 (2.00)
Collector
3
1
Base
0.016 (0.40)
0.008 (0.20)
0.004 (0.10) max
0.004 (0.10) min
Dimensions in inches and (millimeter)
2
Emitter
Electrical Characteristics (at TA=25 OC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Collector-Base breakdown voltage
IC =10μA , IE=0
V(BR)CBO
75
Collector-Emitter breakdown voltage
IC =10mA , IB=0
V(BR)CEO
40
Emitter-Base breakdown voltage
IE =10μA , IC=0
V(BR)EBO
6
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
VCB=70V , IE=0
VCE=35V , IB=0
VEB=3V , IC=0
VCE=10V , IC=150mA
VCE=10V , IC=1mA
IC=500mA , IB=50mA
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
100
50
Base-Emitter saturation voltage
IC=500mA , IB=50mA
VBE(sat)
Transition frequency
VCE=20V , IC=20mA
f=100MHZ
fT 300
Max
0.1
0.1
0.1
300
Unit
V
V
V
µA
µA
µA
0.6 V
1.2 V
MHZ
Output capacitance
Delay time
Rise time
Storage time
Fall time
QW-BTR06
VCB=10V , IE=0
f=1MHZ
VCC=30V , IC=150mA
VBE(off)=0.5V , IB1=15mA
VCC=30V , IC=150mA
IB1=IB2=15mA
Cob
td
tr
ts
tf
8 pF
10 nS
25 nS
225 nS
60 nS
REV:A
Page 1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MMST2222A-G.PDF ] | |
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