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PDF GMBT3904 Data sheet ( Hoja de datos )
| Número de pieza | GMBT3904 | |
| Descripción | NPN EPITAXIAL PLANAR TRANSISTOR | |
| Fabricantes | GTM | |
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ISSUED DATE :2003/12/12
REVISED DATE :2005/06/15B
GMBT3904
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GMBT3904 is designed for general purpose switching and amplifier applications.
Features
*Pb-free package are available
*Collector-emitter voltage 40V
*Complementary to GMBT3906
Package Dimensions
Absolute Maximum Ratings at Ta = 25
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Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
Characteristics at
Symbol
BVCBO
BVCEO
BVEBO
ICEX
IEBO
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
hFE1
hFE2
hFE3
hFE4
hFE5
fT
Cob
Cib
td
tr
tstg
tf
Min.
60
40
6
-
-
-
-
650
-
40
70
100
60
30
300
-
-
-
-
-
-
Ta = 25
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
50
50
200
300
850
950
-
-
300
-
-
-
4
8
35
35
200
50
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Ratings
+150
-65 ~ +150
60
40
6
200
350
Unit
V
V
V
mA
mW
Unit
V
V
V
nA
nA
mV
mV
mV
mV
MHz
pF
pF
ns
ns
ns
ns
Test Conditions
IC=10uA , IE=0
IC=1mA , IB=0
IE=10uA, IC=0
VCE=30V, VEB=3V
VEB=3V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
VCE=20V, IE=-10mA, f=100MHz
VCB=10V, f=100KHz
VEB=0.5V, f=100KHz
VCC=3V, VBE(OFF)=0.5V, IC=10mA, IB1=1mA
VCC=3V, VBE(OFF)=0.5V, IC=10mA, IB1=1mA
VCC=3V, IC=10mA, IB1=-IB2=1mA
VCC=3V, IC=10mA, IB1=-IB2=1mA
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet GMBT3904.PDF ] | |
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