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PDF GMBT2222A Data sheet ( Hoja de datos )
| Número de pieza | GMBT2222A | |
| Descripción | NPN EPITAXIAL PLANAR TRANSISTOR | |
| Fabricantes | GTM | |
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CORPORATION ISSUED DATE :2001/03/12
REVISED DATE :2005/06/27B
GMBT2222A
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GMBT2222A is designed for general purpose amplifier and high speed, medium-power switching applications.
Features
High frequency current gain
High speed switching
For complementary use with PNP type GMBT2907A
Package Dimensions
www.DataSheet4U.com Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Collector to Base Voltage at Ta=25
Collector to Emitter Voltage at Ta=25
Emitter to Base Voltage at Ta=25
Collector Current at Ta=25
Total Power Dissipation at Ta=25
Tstg
VCBO
VCEO
VEBO
IC
PD
Characteristics at
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEX
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Cob
Min.
75
40
6
-
-
-
-
-
-
-
35
50
75
100
40
300
-
Ta = 25
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
10
500
1.0
1.2
2.0
-
-
-
300
-
-
8
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Ratings
+150
-55 ~ +150
75
40
6
600
225
Unit
V
V
V
mA
mW
Unit
V
V
V
nA
nA
nA
mV
V
V
V
MHz
pF
Test Conditions
IC=100uA , IE=0
IC=10mA, IB=0
IE=10uA, IC=0
VCB=60V, IE=0
VCE=60V ,VEB(OFF)=3V
VEB=3V, IC=0
IC=380mA, IB=10mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=100uA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCB=20V, IC=20mA, f=100MHz
VCB=10V, IE=0, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle
2%
1/4
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