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What is IRGBC30KD2?

This electronic component, produced by the manufacturer "International Rectifier", performs the same function as "INSULATED GATE BIPOLAR TRANSISTOR".


IRGBC30KD2 Datasheet PDF - International Rectifier

Part Number IRGBC30KD2
Description INSULATED GATE BIPOLAR TRANSISTOR
Manufacturers International Rectifier 
Logo International Rectifier Logo 


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INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY DIODE
PD - 9.1107
IRGBC30KD2
Short Circuit Rated
UltraFast CoPack IGBT
Features
• Short circuit rated -10µs @125°C, VGE = 15V
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
C
G
E
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, applications.
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
VCES = 600V
VCE(sat) 3.8V
@VGE = 15V, IC = 14A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
TO-220AB
Max.
600
23
14
46
46
12
46
10
± 20
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
µs
V
W
°C
Min.
------
------
------
-----
------
Typ.
------
------
0.50
-----
2 (0.07)
Max.
1.2
2.5
------
80
------
Units
°C/W
g (oz)

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IRGBC30KD2 equivalent
IRGBC30KD2
1400
1200
1000
800
600
VGE = 0V,
f = 1MHz
Cies = Cge + C gc , Cce SHORTED
Cres = C gc
Coes = C ce + C gc
Cies
C oes
400
200 Cres
0A
1 10 100
VCE, Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
1.80
VCC = 480V
VGE = 15V
1.76
TC
IC
= 25°C
= 14A
1.72
1.68
1.64
1.60
1.56
0
10 20 30 40 50
RG, Gate Resistance ()
A
60
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
20
VCE = 400V
IC = 14A
16
12
8
4
0
0 10 20 30
Qg, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
A
40
100
RG = 23
VGE = 15V
VC C = 480V
10
1
IC = 24A
IC = 14A
IC = 7.0A
0.1 A
-60 -40 -20 0 20 40 60 80 100 120 140 160
TC, Case Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Case Temperature


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Featured Datasheets

Part NumberDescriptionMFRS
IRGBC30KD2The function is INSULATED GATE BIPOLAR TRANSISTOR. International RectifierInternational Rectifier

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