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What is IRGBC30FD2?

This electronic component, produced by the manufacturer "International Rectifier", performs the same function as "INSULATED GATE BIPOLAR TRANSISTOR".


IRGBC30FD2 Datasheet PDF - International Rectifier

Part Number IRGBC30FD2
Description INSULATED GATE BIPOLAR TRANSISTOR
Manufacturers International Rectifier 
Logo International Rectifier Logo 


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PD - 9.794
IRGBC30FD2
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY
DIODE
Features
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
G
C
E
n-channel
Fast CoPack IGBT
VCES = 600V
VCE(sat) 2.1V
@VGE = 15V, IC = 31A
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, motor control, UPS and power supply applications.
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Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-101
TO-220AB
Max.
600
31
17
120
120
12
120
± 20
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Min.
Typ.
0.50
2 (0.07)
Max.
1.2
2.5
80
Units
°C/W
g (oz)
Revision 1
To Order

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IRGBC30FD2 equivalent
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Index
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IRGBC30FD2
1400
V GE = 0V,
f = 1MHz
Cies = Cge + C gc , Cce SHORTED
1200 Cres = C gc
Coes = Cce + C gc
1000
Cies
800
Coes
600
400
Cres
200
0
1 10 100
V C E , C ollector-to-E m itter V oltage (V )
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
3.10
VCC = 480V
VGE = 15V
TC = 25°C
I C = 17A
3.06
3.02
2.98
2.94
0
10 20 30 40 50
RG , Gate Resistance ()
A
60
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
20
VCE = 400V
IC = 17A
16
12
8
4
0
0 5 10 15 20 25
Q g , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
30
100
RG = 23
VGE = 15V
VCC = 480V
10
1
IC = 34A
I C = 17A
I C = 8.5A
0.1 A
-60 -40 -20 0 20 40 60 80 100 120 140 160
TC, Case Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-105
To Order


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRGBC30FD2 electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
IRGBC30FD2The function is INSULATED GATE BIPOLAR TRANSISTOR. International RectifierInternational Rectifier

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